Double Data Rate SDRAMs operate at 400 MHz.
October 14, 2003 - With 8-bank architecture, 288 Mb reduced latency DRAM II (RLDRAM™ II) products achieve peak bandwidth of 28.8 Gbps using 36-bit interface and 400 MHz system clock. Memory optimizes bus utilization whether data bus is unidirectional or has balanced READ and WRITE ratio. Features include random cycle time of 20 ns, on-die termination, multiplexed or non-multiplexed addressing, and on-chip delay lock loop, common and separate I/O, and programmable output impedance.
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|Original Press release |
Micron Technology Inc.
8000 S. Federal Way, P.O. Box 6
Boise, ID, 83707 0006
Micron Technology, Inc., Announces Availability of First RLDRAM II Product Samples
Micron supports market with RLDRAM II products
Boise, Idaho, October 6, 2003 - Micron Technology, Inc., today announced sample availability of 288 megabit (Mb) reduced latency DRAM II (RLDRAM(tm) II) products. Micron is sampling 288Mb RLDRAM II devices operating at 400 megahertz (MHz) double data rate (DDR) operation. Micron's RLDRAM II products are ultra high-speed DDR SDRAMs combining fast random access with extremely high bandwidth and high density targeting communication and data storage applications. Samples of 288Mb RLDRAM II devices are now available from Micron.
Today's high-speed networking applications require increased bandwidth for high data transfer rates. RLDRAM II products' eight-bank architecture is optimized to meet these requirements, achieving a peak bandwidth of 28.8 gigabit per second (Gbps) using a 36-bit interface and a 400 MHz system clock. Micron's RLDRAM II product samples boast a low latency and random cycle time (tRC) of 20 nanoseconds (ns), providing optimum bus utilization efficiencies beyond anything currently available in the market place. Additional advantages of the RLDRAM II product feature set include; on-die termination (ODT), multiplexed or non-multiplexed addressing, on-chip delay lock loop (DLL), common and separate I/O, programmable output impedance and a power efficient 1.8V core. These features offer designers optimum flexibility, providing a memory solution designed to fully optimize bus utilization whether the data bus is unidirectional or has a balanced READ and WRITE ratio. "Delivering 400 MHz RLDRAM II samples into the market place demonstrates Micron's commitment to provide a broad product portfolio of leading-edge, high-performance DRAM memory architectures," said Mike Black, Micron's Strategic Marketing Manager for Networking and Communications. "RLDRAM product design activity continues to grow significantly across platforms. Designers in high speed networking, video imaging and server cache applications are realizing the performance advantages RLDRAM devices contribute to their overall system performance. RLDRAM II architecture provides the ultimate balance in raw performance and bus utilization." RLDRAM II devices are available in a standard 144-ball FBGA, 11mm X 18.5mm package to enable ultra high-speed data transfer rates and a simple upgrade path from former products. Infineon and Micron co-developed the RLDRAM architecture, ensuring standardization, multi-sourcing, and functional compatibility.
Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, Flash memory, CMOS image sensors, other semiconductor components and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com.