DDR3 SDRAM offers clock speeds up to 933 MHz.
February 12, 2013 -
Packaged in 96-ball BGA, 4 Gb Model IS43TR16256A operates at 1.5 V and is organized as 256 M x 16. Device is targeted for automotive, industrial, and medical applications as well as variety of communications applications, including access and aggregation nodes, routers and switches, network storage, optical transport, and base stations. Low-voltage Model IS43TR16256AL, operating at 1.35 V, will also be available.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
|Original Press Release |
Integrated Silicon Solution, Inc. (ISSI)
1940 Zanker Road
San Jose, CA, 95112-4216
ISSI Announces Sampling of 4Gb DDR3 SDRAM
Targeted for Automotive, Industrial, Medical and Communications Applications
SAN JOSE, Calif., -- Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today announced it has begun sampling production units of its new 4-gigabit (Gb) DDR3 SDRAMs. The 4Gb DDR3 device is the IS43TR16256A, which operates at 1.5V, is organized as 256Mx16 and packaged in a 96-ball BGA. This adds to the DDR3 SDRAM product family, and ISSI's extensive selection of DRAMs. By using advanced technology, ISSI is able to provide the long lifecycle product support as required by applications in automotive, industrial, medical and communications.
The new device is available with clock speeds up to 933MHz (DDR3-1866). A low voltage option of 1.35V (DDR3L), IS43TR16256AL, will be offered next quarter. In addition to these x16 devices, ISSI also plans to offer devices with x8 data-width organization, with the 1.5V option being IS43TR85120A, and the 1.35V option being IS43TR85120AL. The DDR3 and DDR3L products will be available in commercial, industrial, and automotive temperature grades.
"Our automotive customers have eagerly awaited our 4Gb DDR3 DRAM, our highest density DDR3 product so far, allowing more advanced features and high-resolution in the next generation infotainment systems. Customers have qualified 1Gb and 2Gb DDR3 devices that we sampled them late last year and these will be ramping into higher volume production as the new model year vehicles are released. In addition, customers are also very pleased to learn that we will support the 1.5V and 1.35V standards for their production needs," said Lyn Zastrow, vice president of the Automotive Business Unit.
"The expansion of broadband infrastructure in data centers and customer-premise equipment are driving system designers to incorporate DDR3 DRAMs into their products. These applications are continuously pushing for higher density and higher performance memories. ISSI's 4Gb product offering will be important for our customers designing in the higher-end communications and networking markets," said Anand Bagchi, director of strategic marketing for communications. Key applications in the communications market segment include access and aggregation nodes, routers and switches, network storage, optical transport and base stations.
In addition to this latest DDR3 SDRAM, ISSI also offers a broad line of SDR, mobile SDR/DDR, DDR, DDR2, and DDR3 products, as well as a comprehensive line of asynchronous and synchronous SRAMs with densities from 64Kb to 72Mb, flash memory products, and analog & mixed signal products. ISSI supports a range of Known Good Die (KGD) devices in its portfolio.
Samples of the x16, in 1.5V and 1.35V options, the IS43TR16256A and IS43TR16256AL, are available in commercial and industrial temperature ranges, and the IS46TR16256A and IS46TR16256AL are available in automotive temperature ranges. Samples of the x8, in 1.5V and 1.35V options, will be available in Q2. Volume production shipments of the 4Gb are expected to begin in the second half of 2013.
ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) industrial, medical, and military, and (iv) digital consumer. The company's primary products are high speed and low power SRAM and low and medium density DRAM. The company also designs and markets NOR flash products and high performance analog and mixed signal integrated circuits. ISSI is headquartered in Silicon Valley with worldwide offices in Taiwan, Japan, Singapore, China, Europe, Hong Kong, India, and Korea. Visit our web site at http://www.issi.com/.
CONTACT: Integrated Silicon Solution, Inc.