CMOS Synchronous DRAMs feature industrial temperature range.
April 4, 2012 -
Rated for -40 to +85°C, Models AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer densities of 64, 128, and 256 Mb, respectively. Devices feature fast access time from clock down to 4.5 ns at 5 ns clock cycle, and clock rates of 166 MHz. Internally configured as 4 banks of 1M, 2M, or 4M word x 16 bits with synchronous interface, SDRs operate from +3.3 V power supply. Units provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with burst termination option.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
|Original Press release |
Alliance Memory, Inc.
551 Taylor Way, Suite #1
San Carlos, CA, 94070
Alliance Memory Introduces Three New CMOS Synchronous DRAMs (SDRAM) Rated for the Industrial Temperature Range of -40°C to +85°C
SAN CARLOS, Calif. - Alliance Memory Inc., a worldwide provider of legacy memory ICs for the communications, computing, medical, industrial, and consumer markets, today introduced three new high-speed CMOS synchronous DRAMs (SDRAM) rated for the industrial temperature range of -40°C to +85°C.
The SDRs released today offer densities of 64 Mb (AS4C4M16S-6TIN), 128 Mb (AS4C8M16S-6TIN), and 256 Mb (AS4C16M16S-6TIN). The devices are optimized for high-temperature industrial applications, in addition to high-performance PC, communications, medical, and consumer products requiring high memory bandwidth.
Packaged in a 54-pin, 400-mil plastic TSOP II, the new AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates of 166 MHz. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply and are lead (Pb)- and halogen-free.
Alliance Memory's SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Device Specification Table:
Part number AS4C4M16S-6TIN AS4C8M16S-6TIN AS4C16M16S-6TIN
Density 64 Mb 128 Mb 256 Mb
Configuration 4M x 16 bit 8M x 16 bit 16M x 16 bit
Clock cycle (ns) 6 6 6
Max. access time from clock (ns) 5.4/5.4 5/5.4 4.5/5.4/5.4
Clock rate (MHz) 166 166 166
Samples and production quantities of the new SDRs are available now with lead times of six to eight weeks. Pricing for U.S. delivery is $0.80 for the AS4C4M16S-6TIN (64M SDRAM), $1.30 for the AS4C8M16S-6TIN (128M SDRAM), and $1.60 for the AS4C16M16S-6TIN (256M SDRAM).
About Alliance Memory Inc.
Alliance Memory Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, and synchronous DRAMs (SDR). Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in Germany, France, the United Kingdom, Italy, Sweden, and South East Asia. More information about Alliance Memory is available online at www.alliancememory.com.