CMOS Synchronous DRAM features 16 Mb density.March 7, 2013 -
Housed in 50-pin, 400 mil plastic TSOP II package, Model AS4C1M16S offers fast access time of 5.4 ns at 7 ns clock cycle and clock rate of 143 MHz. SDRAM is internally configured as dual banks of 512 K word x 16 bits with synchronous interface. Operating from single +3.3 V power supply, device provides programmable read/write burst lengths of 1, 2, 4, 8, or full page, with burst termination option. Auto precharge function provides self-timed row precharge initiated at end of burst sequence.
Original Press release
Alliance Memory, Inc.
551 Taylor Way, Suite #1
San Carlos, CA, 94070
USA
Alliance Memory Introduces New High-Speed CMOS Synchronous DRAM with Low 16-MB Density in 50-Pin TSOP II Package
SAN CARLOS, Calif. — Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.
The device released today is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and is particularly well-suited to high-performance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (±0.3V) power supply, and is lead (Pb) and halogen free.
The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C1M16S is the latest in the company's full line of high-speed SDRAMs, which now includes devices with densities of 16 Mb, 64 Mb, 128 Mb, and 256 Mb.
Samples and production quantities of the AS4C1M16S are available now, with lead times of six weeks for large orders. Pricing ranges from $0.60 to $0.70 per piece.
About Alliance Memory Inc.
Alliance Memory Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, and synchronous DRAMs (SDR). Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in Germany, France, the United Kingdom, Italy, Sweden, and South East Asia. More information about Alliance Memory is available online at www.alliancememory.com.
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