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CMOS DDR3 SDRAMs offer clock rates of 800 MHz.

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CMOS DDR3 SDRAMs offer clock rates of 800 MHz.
CMOS DDR3 SDRAMs offer clock rates of 800 MHz.
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July 7, 2014 - Available in 78-ball and 96-ball FBGA packages measuring 9 x 10.5 x 1.2 mm and 9 x 13 x 1.2 mm, respectively, AS4C Series offers transfer rates up to 1,600 Mbps/pin with densities of 1, 2, and 4 Gb. DDR3 and DDR3L SDRAMs operate from single 1.5 or 1.35 V power supply, respectively, and are internally configured as 8 banks of 64 M, 128 M, 256 M, and 512 M x 8 bits and/or 16 bits. Devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8.

Alliance Memory Launches New High-Speed CMOS DDR3 SDRAMs with 1-Gb, 2-Gb, and 4-Gb Densities in 78-Ball and 96-Ball FBGA Packages

Alliance Memory, Inc.
551 Taylor Way, Suite #1
San Carlos, CA, 94070

Press release date: June 26, 2014

SAN CARLOS, Calif. – Alliance Memory today introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

With minimal die shrinks, the company's DDR3 (1.5 V) and DDR3L (1.35 V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer, and telecom applications — eliminating the need for costly redesigns and part requalification.

The AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3, and AS4C512M8D3 DDR3 SDRAMs operate from a single +1.5-V (0.075 V) power supply, while the AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L, and AS4C512M8D3L DDR3L SDRAMs operate from a single +1.35-V power supply. The devices are offered with a commercial temperature range of 0 C to +95 C and an industrial temperature range of -40 C to +95 C.

The DDR3 and DDR3L SDRAMs are internally configured as eight banks of 64M, 128M, 256M, and 512M x 8 bits and/or 16 bits. The devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Device Specification Table:

Samples of the new DDR3 and DDR3L SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing for U.S. delivery starts at $2.00 per piece in 1,000-piece quantities.

About Alliance Memory Inc.
Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company's product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 8K to 4G. Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in Germany, France, the United Kingdom, Italy, Sweden, and Southeast Asia. More information about Alliance Memory is available online at
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