Automotive-Grade Power MOSFETs optimize electrical efficiency.May 31, 2011 -
Available with 30 and 40 V breakdown voltages, STripFET(TM) VI DeepGATE(TM) Power MOSFETs feature current rating from 44-80 A and low on-resistance of 3.0-12.5 mW. AEC-Q101 qualified devices, housed in DPAK or D2PAK surface mount packages, include both logic- and standard-level types. Operating from -55 to 175°C, MOSFETs are suited for window winders, wipers, and heater blowers as well as engine controllers, starter-alternators, and energy recovery systems.
Original Press release
STMicroelectronics
10 Maguire Road
Lexington, MA, 02421
USA
STMicroelectronics in Production with New Power MOSFETs Driving Up Vehicle Electrical Efficiency
Latest technology for power devices trims watts and weight from comfort, body and power-train electronics
GENEVA, -- STMicroelectronics (NYSE: STM), a global leader serving customers across the spectrum of electronics applications and a leader in semiconductors for automotive systems, has extended its range of STripFET(TM) VI DeepGATE(TM) power MOSFETs with the introduction of nine new automotive-grade devices that will deliver energy efficiency, size and cost benefits to cars in the near future.
Energy-efficient electrical systems are increasingly important to car makers. These systems manage equipment from window winders, wipers and heater blowers to engine controllers, starter-alternators and energy recovery systems. Hybrid and electric vehicles, especially, need effective energy management for maximum traveling range. ST's new power MOSFETs will minimize the energy normally lost in electrical drives and controls, leading to greater efficiency, while simultaneously reducing heat generation, allowing smaller, more lightweight assemblies.
This new series of AEC-Q101-qualified 30V and 40V power devices uses ST's advanced STripFET VI DeepGATE technology to achieve extremely low conduction losses relative to their active chip size. They feature low on-resistance ranging from 3.0 milliohms up to 12.5 milliohms in industry-standard DPAK or D2PAK surface-mount power packages, taking up less board space. This new range of power MOSFETs also includes both logic- and standard-level types.
To assure reliability and robustness for automotive-grade applications, all devices undergo 100% avalanche testing both at wafer level and as finished products to meet the conditions for AEC-Q101 qualification. The new devices will also increase the efficiency of power supplies and drives for a wide range of non-automotive equipment and applications.
Major features include:
-- 30V and 40V breakdown voltage
-- Current rating from 44A up to 80A
-- Standard threshold drive
-- Logic-level devices
-- Operating temperature range: -55 degrees C to 175 degrees C
-- AEC-Q101 qualified
The nine new devices are in full production with pricing ranging from $0.50 for the devices with higher RDS(on) to $1.80 for the devices with lower RDS(on), in quantities of 1000. Alternative pricing options are available for larger orders.
For further information please visit www.st.com/pmos.
About STMicroelectronics
STMicroelectronics is a global leader serving customers across the spectrum of electronics applications with innovative semiconductor solutions. ST aims to be the undisputed leader in multimedia convergence and power applications leveraging its vast array of technologies, design expertise and combination of intellectual property portfolio, strategic partnerships and manufacturing strength. In 2010, the Company's net revenues were $10.35 billion. Further information on ST can be found at www.st.com.
STripFET and DeepGATE are trademarks of STMicroelectronics. All other trademarks are the property of their respective owners.
CONTACT: Michael Markowitz of STMicroelectronics, +1-781-591-0354, michael.markowitz@st.com
Web Site: http://www.st.com
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