Asynchronous SRAM includes Error Correction Code.January 14, 2011 -
Compatible with industry standard devices without ECC, 4 Mb Model IS64WV25616EDBLL is organized as 256 K x 16 and has operating voltage range of 2.4-3.6 V. Device is based on 65 nm technology and draws 45 mA current when operating from -40 to 85°C. Typical operating current is 25 mA. Available in 44-pin TSOPII and 48-pin BGA packages, Model IS64WV25616EDBLL features 10 ns access time, and is capable of detecting and correcting one bit errors for each byte.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Integrated Silicon Solution, Inc. (ISSI)
2231 Lawson Lane
Santa Clara, CA, 95054 3311
USA
ISSI Introduces High Speed SRAM with Error Correction
4Mb Asynchronous SRAM With Error Correction Code (ECC) Targeted for High Reliability Automotive, Industrial, Medical, Mil-Aero and Telecom/Networking Applications
SAN JOSE, Calif., -- Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today introduced the ECC based IS64WV25616EDBLL, a 4Mb high speed asynchronous SRAM. This device is designed to provide a high speed asynchronous SRAM solution with enhanced data integrity that is form-fit-function compatible with current industry standard devices without ECC.
The IS64WV25616EDBLL is organized as 256Kx16 and has an operating voltage range of 2.4V to 3.6V. The device is offered in 44-pin TSOPII and 48-Pin BGA packages. To provide enhanced reliability, the 44-pin TSOPII is a copper lead frame based product. IS64WV25616EDBLL is offered in both leaded and lead free options to address various customer requirements. This unique solution from ISSI is based on 65nm technology and draws only 45mA operating current when operated in the range of -40 to 85C. Typical operating current is only 25mA. The device is offered in an industry leading 10ns access time, and can support -40 to 85C and -40 to 125C temperature ranges.
The error detection scheme is based on an independent hamming code for each byte. The device detects and corrects one bit errors for each byte. The device provides better reliability than parity code schemes which can only detect an error, but not correct it.
"ISSI's IS64WV25616EDBLL provides a high quality and high reliability solution that a number of automotive customers have been looking for," said Lyn Zastrow, ISSI vice president of the Automotive Business Unit. "The Error Correction is very attractive for many automotive applications especially engine and transmission control."
A 512Kx8 option offered in a 44-pin TSOPII will be available in April, 2011. And a 1.8V option will be available in June, 2011.
"The IS64WV25616EDBLL is well suited for Mil-Aero and other ruggedized applications requiring error -- free memory," said Sean Long, ISSI director of marketing, Industrial, Medical, Mil-Aero Business Unit (IMM). "In addition to the broad feature set, ISSI's commitment to provide long term support is a great added value that many IMM customers require."
The IS64WV25616EDBLL, combined with extended temperature and a variety of options, make this product ideal for automotive, industrial, medical, Mil-Aero and telecom/networking applications.
About ISSI
ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) digital consumer electronics, (ii) networking, (iii) mobile communications, (iv) automotive electronics, and (v) industrial, medical, and military/aerospace. ISSI is headquartered in Silicon Valley with worldwide offices in Taiwan, Japan, Singapore, China, Europe, Hong Kong, India, and Korea. Visit our web site at http://www.issi.com/.
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