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RF Switches are offered in multi-throw versions.


March 20, 2009 - Offered in 2.0 x 1.3 x 0.35 mm QFN package, RF1126 low-power SPDT symmetric switch offers insertion loss and linearity performance suitable for signal routing and antenna switching applications. Offered in 2.0 x 2.0 x 0.55 mm QFN package, SP3T symmetric switches RF1131 and RF1132 provide insertion loss of 0.32-0.49 and 0.47-0.69 dB and linearity of 59/62 dBm and 65/63 dBm, respectively, making them suited for use in multi-band CDMA single routing applications.

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RFMD® Expands High-Performance RF Switch Portfolio


GREENSBORO, N.C., Feb. 10 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the expansion of the Company's high-performance switch portfolio to include three new multi-throw RF switches: the RF1126, RF1131 and RF1132. The high-performance RF switches are designed to operate in multiple market segments, including antenna tuners, CDMA handsets and 3G multimode devices.

The RF1126 is a low-power, single-pole double-throw (SPDT) symmetric switch that offers industry-leading insertion loss and linearity performance suitable for signal routing and antenna switching applications. The RF1131 and RF1132 are single-pole three-throw (SP3T) symmetric switches designed for applications requiring high linearity performance, such as CDMA handsets and 3G multimode devices. The RF1131 and RF1132 are pin-for-pin compatible and offer performance trade-offs between linearity and insertion loss, enabling designers to select a switch based upon a specific application's performance priorities, thereby increasing platform capabilities.

Each of the three RF switches utilize RFMD's industry-leading gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) manufacturing capabilities and leverage proprietary switch technology developed for use in RFMD's high volume cellular transmit modules.

Technical features of the RF1126:

Very small footprint, 2.0 x 1.3 x 0.35 mm QFN package

Very low insertion loss

Ideal for use in multi-band CDMA Rx diversity applications

Technical features of the RF1131 and the RF1132:

Very small footprint: 2.0 x 2.0 x 0.55 mm QFN package

Low insertion loss: RF1131 - 0.32 to 0.49 dB, RF1132 - 0.47 to 0.69 dB

Excellent Linearity (IIP3): RF1131 - 59 dBm (Cell) / 62 dBm (PCS), RF1132 - 65 dBm (Cell) / 63 dBm (PCS)

Ideal for use in multi-band CDMA single routing applications

Availability

Samples of the RF1126, RF1131 and RF1132 are available immediately. RFMD® anticipates revenue generated by its switch portfolio to grow throughout calendar year 2009.

RFMD will showcase its industry-leading portfolio of cellular front end products at the 2009 GSMA Mobile World Congress in Barcelona, Spain, February 16-19, 2009, in Hall 8, Stand 8B79.

RFMD's Cellular Front End Components Portfolio

RFMD offers a broad portfolio of high-performance front end components addressing the increasingly complex challenges of the cellular market. RFMD's front end components address all cellular frequency bands and air standards and include discrete switches, antenna switch modules, LNAs, front end power management and RF power management.

About RFMD

RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

SOURCE RF Micro Devices, Inc.

CONTACT: Jerry Neal

Executive Vice President,

1-336-678-7001,

of RFMD

Web Site: http://www.rfmd.com (RFMD)


Contacts:

General Information:
Jerry Neal Executive Vice President
USA
Phone: 336-678-7001

Company Information:
Name: RF Micro Devices, Inc.
Address: 7628 Thorndike Rd.
City: Greensboro
State: NC
ZIP: 27409-9421
Country: USA
Phone: 888-662-7363
FAX: 336-931-7454
http://www.rfmd.com


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Switch Filter Modules suit multiband, multimode 3G handsets.
Front End Modules target mobile Wi-Fi applications.

Other News from this company:
RFMD® Receives First GaN Product Purchase Order from Tier-One Wireless Base Station Manufacturer
RFMD® Announces Major Gallium Nitride (GaN) Milestones
RFMD® Introduces Portfolio of Ultra-Linear Push-Pull Amplifiers for Multiple CATV Infrastructure Applications
RFMD® Expands Broadband Transmission Product Portfolio; Enables Enhanced Bandwidth-Driven CATV Services and Advanced Fiber Deep Architectures
RFMD® Selected by Leading Manufacturer of Smartphones to Supply Highly Integrated GPS LNA Module
RFMD® Targets CDMA Components Market with Compelling New Products
RFMD® Opens New Customer Support Center in Bangalore
RFMD® Selected by Samsung to Support More Than 10 Upcoming 3G Handsets
RF Micro Devices® Shareholders Approve All Proposals During 2008 Annual Meeting
RF Micro Devices® Commences Volume Shipments of POLARIS® to Multiple Leading Handset Manufacturers
RFMD® and SELEX GALILEO Announce Signing of Strategic Supply Agreement
RFMD Provides Update on Share Repurchase Program
RFMD® Completes Acquisition of Filtronic Compound Semiconductors Ltd
RFMD® to Present at Upcoming Investor Conferences
RFMD Achieves DigRF3G Hardware Validation with Top-Tier Handset Baseband Manufacturer
RF Micro Devices to Present at the 10th Annual Needham Growth Stock Conference on Friday, January 11, 2008
RFMD to Acquire Filtronic Compound Semiconductors Ltd
RFMD® Completes Qualification of First Generation Gallium Nitride (GaN) Process Technology
RFMD® Extends Leadership In Wireless Front Ends with Introduction of New Enabling Technologies
RFMD® Ships 100 Millionth Polaris(TM) RF Solution



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