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Infrared Emitters provide high-pulse-current operation.
Infrared Emitters provide high-pulse-current operation.

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Infrared Emitters provide high-pulse-current operation.


March 3, 2009 - Featuring 3.5 x 2.8 x 1.75 mm PLCC2 SMD package, VSMG2720 has viewing angle of ±60°, 45 mW optical power at 100 mA, and radiant intensity of 14 mW/sr at 100 mA. TSHG5510 comes in 5 mm (T1¾) package with lens height of 4.4 mm, and features viewing angle of ±38°, 55 mW optical power at 100 mA, and radiant intensity of 32 mW/sr at 100 mA. Devices offer switching times of 15 nsec, low forward voltage of 1.45 V at 100 mA and 2.10 V at 1 A, and support 16 Mbit/sec data transmission rates.

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Infrared Lighting LED supplies 3.5 W of optical output power.
Pulsable Emitter is designed for IR applications.
Infrared Emitter has on-axis radiant intensity of 65 mW/sr.
Infrared Emitters operate in 940 nm wavelength.
Infrared Emitter has radiant intensity of 16 mW/sr at 100 mA.
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Infrared Emitters feature 20 nsec switching time.
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Short Wave Emitter features plug-in connection.
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IR Emitters are optimized with 850 nm wavelength.
Fiber Optic Devices are offered in various styles.


Vishay Releases New High-Power, High-Speed 830-nm Infrared Emitters in SMD PLCC2 and 5-mm (T1¾) Packages with Industry's Lowest Forward Voltage of 1.45 V at 100 mA and 2.10 V at 1 A, and Radiant Intensity to 32 mW/sr at 100 mA


MALVERN, Pa. - Feb. 11, 2009 - Vishay Intertechnology, Inc. today broadened its optoelectronics portfolio with the introduction of high-power, high-speed 830 nm surface-mount PLCC2 and 5-mm (T1¾) infrared emitters with high radiant intensity and the industry's lowest forward voltage drop.

Featuring the 3.5-mm by 2.8-mm by 1.75-mm PLCC2 SMD package, the VSMG2720 has a viewing angle of ±60°, 45-mW optical power at 100 mA, and a radiant intensity of 14 mW/sr at 100 mA, 150 % greater than any other PLCC2 emitter on the market.

The 5-mm (T1¾) package of the TSHG5510 offers a lens height of 4.4 mm with through-hole insertion standoffs. The device features a viewing angle of ±38°, 55-mW optical power at 100 mA, and a radiant intensity of 32 mW/sr at 100 mA. Both devices are suitable for high-pulse-current operation.

With the industry's lowest forward voltage of 1.45 V at 100 mA and 2.10 V at 1 A, the VSMG2720 and TSHG5510 emitters provide the basis for very uniform operation performance, especially in a series circuit layout. The devices feature switching times of 15 ns, meeting the requirements for high-modulation operation of 24 MHz and supporting data transmission rates of up to 16 Mbit/sec.

The combination of a wide viewing angle, high power output up to 1 A, and high speed makes the VSMG2720 and TSHG5510 emitters ideal for illumination in video security cameras using CCD or CMOS image sensors, where they provide improved quantum efficiency compared to longer wavelength emitters.

The devices are also optimized for infrared audio, video, and data transmission in free-air data transmission systems with high modulation frequencies or high data transmission rates, such as wireless audio headsets. For example, many theaters and museums will use systems enabled by the devices to comply with the Americans with Disabilities Act in providing infrared audio transmitters.

The emitters are compatible with lead (Pb)-free reflow soldering and comply with WEEE 2002/96/EC and RoHS 2002/95/EC. The VSMG2720 offers a moisture sensitivity level (MSL) of 2A, in accordance with J-STD-020, enabling a floor life of four weeks without concern for absorption.

The introduction of the VSMG2720 and TSHG5510 emitters complements the recently introduced 870-nm TSFF5510 5-mm leaded infrared emitter and the VSMF4720 870-nm, PLCC2 surface-mount emitter, allowing customers to choose the package and wavelength that is best for their application and assembly method.

Samples and production quantities of the VSMG2720 and TSHG5510 infrared emitters are available now, with lead times of four weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader.

Vishay can be found on the Internet at http://www.vishay.com.

For more information:

Sales contact: http://www.vishay.com/ir-emitting-diodes/sales

Company Information:
Name: Vishay Intertechnology, Inc.
Address: 63 Lincoln Hwy., P.O. Box 4004
City: Malvern
State: PA
ZIP: 19355 2143
Country: USA
Phone: 610-644-1300
FAX: 610-296-0657
http://www.vishay.com


More New Product News from this company:
Thin Film Chip Resistors feature tolerances down to ±0.05%.
Aluminum Capacitors offer max temperature rating of 105°C
Planar Transformer features frequency range of 50-400 kHz.
Axial-Lead Resistors offer power ratings to 1.0 W.
High-Frequency Rectifier reduces losses in PFC applications.
Monolithic Power MOSFET features integrated Schottky diode.
LED Graphics Displays feature 128 x 32 pixels.
P-Channel Power MOSFET packs 1 billion cells per square inch.
Solid Tantalum Chip Capacitors offer ratings up to 63 V.
Thin Film Resistors offer ±5 ppm/°C TCR and ±0.02% tolerance.

Other News from this company:
Vishay's New VBPW34x and VBP104x Series of High-Speed PIN Photodiodes Feature Gullwing and Reverse Gullwing SMD Packages in Clear Epoxy and Daylight Blocking Filtered Versions
Vishay Systems Web Tension Control Technology to Be Used in Coating Pilot Plant
Vishay's New-Generation, Ultra-Precision VHP100 Bulk Metal Foil Resistor is Shortlisted for Elektra 09 European Electronics Industry Awards
Model G4 Advanced Process Control Instruments Now Available with Remote Access via Web Interface
Vishay Releases Industry-First Gen. 5.0 High-Performance 45-V and 100-V Schottky Diodes in D-Pak Package With Current Ratings From 6 A to 20 A
Vishay's TrenchFET® Gen III Family of Power MOSFETs Selected as Finalist in EDN's 19th Annual Innovation Awards
Vishay's SMR1DZ and SMR3DZ Ultra-High-Precision Z-Foil Molded
Vishay's RNC90Z Military-Established, Bulk Metal® Z-Foil Reliability Resistors Combine Extended Resistance Tolerance Down to ±0.005%, TCR of ±0.2 ppm/°C, and ESD Immunity up to 25 kV
Vishay's TR8 MicroTan(TM) Tantalum Chip Capacitor Named as Winner of EDN China's Annual Innovation Award in Passive Component, Connector, and Sensor Category
Vishay Upgrades 5 V Infrared Receiver Series to Offer 15% Greater Sensitivity, 30% Reduction in Operating Current, Broader 3-5 V Power Supply Range, and Improved Pulse Width Accuracy and EMI and ESD Immunity
Vishay Receives Two Awards from Arrow Electronics
Vishay Wins 2008 EE Times ACE Award in Ultimate Products of the Year, Analog ICs Category
Vishay's Electro-Pyrotechnic Initiator Chip Resistor Named as Winner of EDN's 18th Annual Innovation Award
Vishay's HE3 Wet Tantalum High-Energy Capacitor Chosen as Product of the Year by Electronic Products China Magazine
Vishay Releases Royalty-Free Courier-115 Software Protocol Enabling Infrared Wireless Communication for Texas Instruments MSP430 MCU Platform
Vishay's 3-V Infrared Receiver Series Offers Enhanced Sensitivity, 70% Reduction in Operating Current, Broader 2.5-V to 5.5-V Power Supply Range, and Improved EMI and ESD Immunity
Vishay Semiconductor Products Now Available from Digi-Key
Vishay Receives Two Manufacturer of the Year Awards from National Electronic Distributors Association
Vishay TrenchFET® Power MOSFETs For OR-ing Applications Feature Industry-Best On-Resistance Down to 1.5 Milliohms in SO-8 Footprint Area with 20-V Drain-to-Source and Gate-to-Source Ratings
Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down to 29 Milliohms



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