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Tempco Electric Heater Corporation
Designs and Manufactures Heating Elements, Temperature Sensors and Controls, and Turnkey Process Heating Systems. Thousands of products including accessory items are available from stock. Request our 864 page Visionary Solution catalog for product and engineering information.

F-RAM has operating temperature range of -40 to +85°C.


September 16, 2008 - Available in 8-pin SOIC package, FM25V10 1 Mb, 2-3.6 V SPI nonvolatile RAM consumes 3 mA while running at 40 MHz SPI clock rate, 90 µA during standby, and 5 µA during sleep mode. It features NoDelay(TM) writes, 1E14 read/write cycles, and active power consumption of 38 µA per MHz. Product performs write operations at bus speed without write delays, allowing data to be written immediately to memory array. Unit suits high frequency data collection and industrial controls applications.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)

 See related product stories
Parallel FRAM offers near unlimited write endurance.
Serial 256 Kb FRAM Devices offer no write delays.
F-RAM Memory is pin-compatible with asynchronous SRAM.
Nonvolatile RAM writes at bus speed up to 1 MHz.
Foundry offers 0.18 µm embedded flash process technology.
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 See more related product stories:
Nonvolatile FRAM is available in 512 Kb and 1 Mb versions.
Non-Volatile Cache targets server and storage applications.
Low-Power Serial FRAM comes in 8-pin SOIC package.
Parallel Nonvolatile FRAM comes in 48-pin FBGA package.
High-Speed F-RAM Device provides 512 Kb capacity.
Parallel F-RAM has 1 Mb parallel memory cycle time of 90 ns.
Non-Volatile SRAMs offer 20 ns access times.
Serial F-RAM Memory meets AEC-Q100 automotive standards.
Event Data Recorder features 32 Kb F-RAM for data storage.
Non-Volatile F-RAM features high-speed SPI.
Digital Flash Card is suited for industrial applications.
Processor Companion features integrated 32 kHz crystal.
F-RAM System Manager supports any processor-based design.
Automotive F-RAM Device is Grade 1 AEC-Q100-qualified.
Embedded FRAM Device targets digital TVs.
Nonvolatile SRAM is built on 0.13 micron SONOS process.
FRAM Memory Device operates up to 125°C.
FRAM Device offers 10 years of data retention.
Serial FRAM operates in temperatures of up to 125°C.
Quad State Savers retain logic states without power.


Ramtron Announces High-Speed and Power Flexible 1-Megabit Serial F-RAM


First in a family of new serial and parallel high-speed F-RAM devices from Ramtron

COLORADO SPRINGS, CO - September 9, 2008 - Ramtron International Corporation (Nasdaq: RMTR), a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today announced the first device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The first device in Ramtron's V-Family of F-RAM products is the FM25V10, a 1-megabit (Mb), 2.0 to 3.6-volt, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay(TM) writes, 1E14 read/write cycles, and low power consumption. The FM25V10 is an ideal alternative to 1Mb serial Flash and serial EEPROM memory in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. Additional SPI, I2C, and parallel interface V-Family F-RAM products are planned for introduction in 2008.

"Ramtron's V-Family of F-RAM products addresses our customer demand for lower operating voltage and integrated features that reduce board space as well as assembly and device costs," explains Ramtron Marketing Manager, Duncan Bennett. "Our device performance capabilities have been expanded by our high-density F-RAM manufacturing process, allowing our V-Family of F-RAM products to operate over a much wider voltage range."

About the FM25V10
Unlike serial Flash memory or serial EEPROM, the FM25V10 performs write operations at bus speed without write delays, allowing data to be written immediately to the memory array. The next bus cycle can start without the need for data polling. Compared to serial Flash and serial EEPROM, the FM25V10 also offers greater than eight orders of magnitude more endurance and consumes less than one-tenth the active power.

High-performance F-RAM capabilities make the FM25V10 ideal for nonvolatile memory applications that require frequent or rapid data writes or low power operation. Applications range from high frequency data collection where a high number of write cycles are critical, to demanding industrial controls where the long write time of serial Flash or EEPROM is impractical due to potential data loss.

The FM25V10 has a read-only device ID and can be ordered with a unique serial number and/or system reset option. The device ID provides information about the manufacturer, product density, and product revision of the device. The unique serial number allows the host to have an ID that is different from any other host in the world. The system reset option eliminates the need for an external system reset component in the system.

The FM25V10 operates over the industrial temperature range of -40°C to +85°C, and consumes only 3 milliamps while running at a 40MHz SPI clock rate, 90 microamps during standby, and 5 microamps during sleep mode. The FM25V10 offers an active power consumption of 38 microamps per MHz, which is an order of magnitude lower current than similar serial Flash or EEPROM products.

About the F-RAM V-Family
Manufactured on the proven 130nm CMOS manufacturing process developed by Ramtron and Texas Instruments, the Ramtron V-Family of F-RAM products will include a variety of parallel, serial I2C and SPI memories. The advanced manufacturing process enables improved device specifications and increased feature sets. Additional Ramtron V-Family products planned for introduction before the end of 2008 will feature additional SPI product densities, as well as I2C and parallel interfaces. All serial F-RAM V-Family products can be equipped with optional device features including unique serial numbering and a system reset option.

Pricing and Availability
Samples of the FM25V10 are available now in a RoHS-compliant, 8-pin SOIC package. Unit pricing begins at $6.51 in high volume.

About Ramtron
Ramtron International Corporation, headquartered in Colorado Springs, Colorado, is a fabless semiconductor company that designs, develops and markets specialized semiconductor memory and integrated semiconductor solutions used in a wide range of product applications and markets worldwide. For more information, visit www.ramtron.com

CONTACT: Christopher Wray
(719) 481-7182
chris.wray@ramtron.com


Contacts:

General Information:
Christopher Wray
USA
Phone: 719-481-7182
Send email  E-mail this person

Company Information:
Name: Ramtron International Corp.
Address: 1850 Ramtron Dr.
City: Colorado Springs
State: CO
ZIP: 80921
Country: USA
Phone: 800-545-3726
FAX: 719-481-9294
http://www.ramtron.com


More New Product News from this company:
Parallel FRAM offers near unlimited write endurance.
Serial 256 Kb FRAM Devices offer no write delays.
F-RAM Memory is pin-compatible with asynchronous SRAM.
Nonvolatile RAM writes at bus speed up to 1 MHz.
Nonvolatile FRAM is available in 512 Kb and 1 Mb versions.
Low-Power Serial FRAM comes in 8-pin SOIC package.
Parallel Nonvolatile FRAM comes in 48-pin FBGA package.
High-Speed F-RAM Device provides 512 Kb capacity.
Parallel F-RAM has 1 Mb parallel memory cycle time of 90 ns.

Other News from this company:
Ramtron 4-Megabit F-RAM Selected for Highly Reliable Industrial Solid-State Disk
Ramtron Announces Grade 1 Automotive Qualification for Nonvolatile State Savers
Ramtron Announces Foundry Agreement with IBM
Ramtron Features Nonvolatile F-RAM Memory Automotive Products at Consumer Telematics Seminar 2008
Blue Planet Designs Ramtron Processor Companions into Smart Retrofit Diesel Particulate Filters (DPF)
Ramtron's 4-Megabit Nonvolatile F-RAM Memory Wins EDN China's Industry Innovation Award
Daesung-Eltec Designs FRAM Memory into DSP-Based Digital Car Audio System for Renault Samsung Motors
First Ramtron FRAM Memory Device Qualified to Grade 1 Automotive Specifications
Ramtron Introduces USB Interface for its Versa 8051 MCU Devkit
Ramtron Introduces USB Interface for Its Versa 8051 MCU Devkit
Ramtron's 16Kb SPI FRAM Memory Device Achieves AEC-Q100 Standard
Ramtron Highlights New FRAM-Enhanced(TM) Strategy, Showcasing Its Integrated Products at the Electronica 2006 Trade Fair in Munich, Germany
Ramtron's 16Kb 3V Serial FRAM Achieves AEC-Q100 Standards, Broadening Company's Line of Qualified Automotive Products
Ramtron to Supply FRAM Memory to Ampy Automation for Arizona Salt River Project Utility Meters
Ramtron to Showcase Line of Automotive FRAM Memory Parts at Convergence 2006 in Detroit, Michigan
Ramtron Launches VRS51L3074 Design Contest for Design with the First FRAM-Enhanced 8051 MCU
Mouser Electronics and Ramtron International Enter Into Global Distribution Agreement
Ramtron previews high performance Versa 8051 MCU at the 2006 Embedded Systems Conference in San Jose, California



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