August 18, 2008 - Operating at 12 GHz from 3 V supply, NE3515S02 Hetero-Junction FET delivers P1 dB of +14 dBm with 14 dB linear gain while maintaining noise figure less than 0.5 dB, typ. Designed for DBS LNBs and high dynamic range front end applications, unit is housed in RoHS-compliant S02, hollow plastic surface-mount package with footprint of 3.2 x 3.2 mm that features recessed leads for low inductance.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)

See related product stories
	RF Power Transistors target TD-SCDMA wireless networks.
	GaAs FETs are optimized for power added efficiency.
	FETs are suited for multiple wireless applications.
	Analog FET Pre-Driver addresses automotive motor control.
	FET Module is designed for synchronous buck converters.

See more product news in:
	Electronic Components and Devices

Tools for you
del.icio.us	DIGG
Facebook	Reddit
StumbleUpon	Twitter
Print This Page	E-Mail Story
Watch_Company	Save Story
View Company Profile
Company web site
More news from this company

More Tools and information

Search for suppliers of

Field Effect Transistors (FET)

Join the forum discussion at:

Wired In

Newsletters

Your Gateway to a Fast Changing World Product News Alerts
	Receive similar stories and other customized news to keep you in the know on the products shaping industry.
	Subscribe Free Today Subscribe View Sample

Industry Market Trends Has Got It
Latest developments Trends Best practices Opinions & Commentary
Get Ahead. Get IMT. Subscribe Free Today Subscribe View Sample

See more related product stories:
	FET Module comes in 56-pin, 8 x 8 mm MLP package.
	UltraFET Devices offer thermal resistance.
	GaAs FETs support 13.75-14.5 GHz Ku-Band frequency range.
	C-Band GaAs FETs suit satellite and radar applications.
	GaN Power FET achieves 174 W output at 6 GHz.
	Power GaAs MESFET achieves drain efficiency over 55%.

New NEC HJ FET Sets New Standard for Power, Gain and Low Noise Performance

Santa Clara, CA - July 18, 2008 - Here's good news for designers working in the X and Ku bands. NEC's new NE3515S02 Hetero-Junction FET is ideal for use as a buffer amplifier in applications like DBS LNBs and high dynamic range front ends. At 12GHz and a supply voltage of just 3V, the NE3515S02 delivers a P1dB of +14dBm with 14dB Linear Gain - all while maintaining a Noise Figure under 0.5dB (typ).

Available now from CEL, the NE3515S02 is housed in NEC's RoHS-compliant S02 package. This hollow plastic surface-mount package has an overall footprint of just 3.2 x 3.2 mm and features recessed leads for lower inductance and improved performance. In stock and available now, the NE3515S02 is currently priced at 99¢ in 10K quantities.

Readers call your local CEL Sales office, numbers are listed at www.cel.com

For more information, please visit www.cel.com

California Eastern Laboratories is the authorized North American source for NEC RF, Wireless and Optoelectronic semiconductor products

California Eastern Laboratories
4590 Patrick Henry Drive P.O. Box 54964 Santa Clara, CA 95054-1817 408-988-3500 FAX 408-988-0279

Company Information:
Name: California Eastern Laboratories
Address: 4590 Patrick Henry Dr.
City: Santa Clara
State: CA
ZIP: 95054
Country: USA
Phone: 408-988-3500
FAX: 408-988-0279
http://www.cel.com

More New Product News from this company:
	Transceiver Module offers extended 802.15.4/ZigBee range.
	RF Switch supports frequencies down to 10 MHz.
	Front End IC eliminates need for RF component matching.
	Radio Module accelerates high-end ZigBee development.
	Wireless Transceiver has 23 x 31 mm footprint.
	SPDT Switch comes in 1.0 x 1.0 x 0.37 mm, 6-pin package.
	SPDT Switch IC measures 1.0 x 1.0 x 0.37 mm.
	CMOS SP4T MMIC Switch operates with voltages of 1.8-5.3 V.
	ZigBee Transceiver IC helps simplify radio designs.

Brought to you by Thomasnet.com Browse ThomasNet Directory

News provided by ThomasNet News^® (TNN). TNN is a comprehensive source of new and timely product information in the industrial marketplace. TNN supplies new product information to the web sites, e-marketplaces and print publications that serve the industrial marketplace. For press release submissions please go to http://news.thomasnet.com/submitpr.html. BY ACCESSING, BROWSING AND/OR USING THIS WEB SITE AND/OR ANY WEB SITES PROVIDED BY ProductNews.com, YOU AGREE TO BE BOUND BY THE TERMS OF USE AGREEMENT.

FET is suited for use as buffer amplifier.

New NEC HJ FET Sets New Standard for Power, Gain and Low Noise Performance

Post a comment about this story