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Chipsets are optimized for high frequency DC-DC applications.
July 31, 2008 -
Combining HEXFET® MOSFET silicon and DirectFET packaging technology, 25 V DirectFET® MOSFET chipsets deliver synchronous MOSFET solution in SO-8 footprint and with 0.7 mm profile. Model IRF6710S2 is used as control MOSFET due to low gate resistance of 0.3 W and low Miller charge (Qgd) of 3.0 nC, which reduces switching losses. Suited for high current synchronous MOSFET circuits, IRF6795M and IRF6797M have low integrated Schottky that reduces diode conduction and reverse recovery losses.
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IR Introduces 25V DirectFET® Chipset Optimized for High Frequency, High Efficiency DC-DC Applications
EL SEGUNDO, Calif. - International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a 25V synchronous buck converter DirectFET® MOSFET chipset for point-of-load (POL) converter designs, and server, high-end desktop and notebook computer applications.
The new 25V chipset combines IR's latest generation HEXFET® MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8, and with slim 0.7 mm profile. The new IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)) gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.
"The IRF6710S2 control MOSFET features ultra-low Rg and charge, and, when co-designed with the IRF6795M and IRF6797M synchronous MOSFETs which include integrated Schottky, provides a solution for high frequency, high efficiency DC-DC converters that delivers excellent performance over the entire load range," said Vijay Viswanathan, IR's product marketing engineer for Enterprise Power Products.
The IRF6710S2 is ideally suited as a control MOSFET due to the device's very low gate resistance of 0.3 W and very low Miller charge (Qgd) of 3.0 nC which significantly reduces switching losses.
The IRF6795M and IRF6797M feature extremely low RDS(on) to significantly reduce conduction losses while the integrated Schottky reduces diode conduction losses and reverse recovery losses making these devices well suited for high current synchronous MOSFET circuits. The IRF6795M and IRF6797M have a common MX footprint to allow easy migration from existing SyncFET devices.
More information is available on the International Rectifier website at http://www.irf.com/whats-new/nr080710.html
Availability and Pricing
Pricing for the IRF6710S2TR1PbF begins at US $0.66 in 10,000-unit quantities. Pricing for the IRF6795MTR1PbF and IRF6797MTR1PbF begins at US $1.35 and US $1.65 respectively each in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.
About International Rectifier
International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com.
Contacts:
General Information:
Graham Robertson
USA
Phone: 310-726-8512
 E-mail this person
Company Information:
Name: International Rectifier Corp.
Address: 233 Kansas St.
City: El Segundo
State: CA
ZIP: 90245
Country: USA
Phone: 800-981-8699
FAX: 310-322-3332
http://www.irf.com
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