Power Amplifiers handle pulsed S-band radar applications.
June 30, 2008 -
Based on gallium nitride process technology, 400 W GaN high power amplifiers operate over frequency range of 2.9-3.5 GHz from 65 V supply, delivering power gain of 10.5 dB. Housed in thermally efficient, ceramic hermetically sealed 24 x 17.4 mm package, units offer MTTF of 1E6 hr at 200°C junction temperature. In S-band radar applications, HPAs are combined in larger 2.5 kW pallet amplifier assemblies with as many as 8 or more HPAs utilized in each pallet.
RFMD® Unveils 400W GaN High Power Amplifier Technology Demonstrator for Pulsed S-Band Radar Applications
Paper Presented at IEEE MTT-S International Microwave Symposium 2008
ATLANTA, June 18 - RF Micro Devices, Inc. (NASDAQ:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today unveiled a 400W high power amplifier (HPA) that demonstrates the exceptional performance characteristics of RFMD's internally developed gallium nitride (GaN) process technology. The 400W GaN HPAs are designed for air traffic control radar and ship-borne or ground-based pulsed S-band surveillance radar applications.
In radar applications RFMD's 400W GaN HPAs operate over a frequency range of 2.9 to 3.5 GHz, from a 65V supply delivering a power gain of 10.5 dB. Placed in a thermally efficiency, ceramic hermetically sealed package measuring only 24 x 17.4 mm, the 400W GaN HPAs deliver power density and size advantages over competing silicon bipolar technologies. Further, RFMD's GaN process technology provides a larger bandwidth at a higher operating output power than silicon bipolar while maintaining an industry-leading drain efficiency of 50 percent across the band.
Another key area of differentiation for RFMD's GaN is its reliability. In S-band radar applications HPAs are combined in larger 2.5KW "pallet" amplifier assemblies with as many as eight or more HPAs utilized in each pallet. Traveling wave tubes (TWT) technology, traditionally used in these applications, are prone to reliability issues resulting in field failures and expensive replacement costs. With a mean-time-to-failure (MTTF) goal of 1E6 hours at a 200 degrees C junction temperature, RFMD's GaN technology will deliver superior reliability, resulting in a considerably lower total cost of ownership for customers.
"RFMD is committed to delivering a portfolio of highly competitive and compelling components for the aerospace & defense (A&D) marketplace," said Jeff Shealy, vice president and general manager of RFMD's Aerospace & Defense Business Unit. "RFMD's advancements in GaN process technologies are paving the way for a broad range of components for radar and other high power applications. Additionally, our longstanding relationships in the A&D market enable RFMD to engage key customers to evaluate these state-of-the-art process technology innovations."
RFMD's Aerospace & Defense Business Unit has a proven track record of operational excellence and a demonstrated legacy of successful military programs and space program flight history. The Aerospace & Defense Business Unit delivers world-class product innovation and global customer support via multiple design and manufacturing facilities located in North America and Europe. Manufacturing facilities for military and space-level programs are equipped with complete reliability analysis labs as well as in-house screening and qualification. For more information please see www.rfmd.com/aerospacedefense.
RFMD® is proud to participate at the IEEE MTT-S International Microwave Symposium 2008 and will present additional information on the 400W GaN HPAs during a technical session at WE1E-01 on Wednesday, June 18th, at 8:00 a.m.
RFMD is showcasing its industry-leading portfolio of high-performance semiconductor components at the IEEE MTT-S International Microwave Symposium 2008, June 17-19, at the Georgia World Congress Center in Atlanta, Georgia, in Booth 1311.
About RFMD:
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001- certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
Source: RF Micro Devices, Inc.
CONTACT:
Jerry Neal,
Executive Vice President,
+1-336-678-7001
General Information:
Jerry Neal Executive Vice President
USA
Phone: 336-678-7001 Company Information: Name: RF Micro Devices, Inc. Address: 7628 Thorndike Rd. City: Greensboro State: NC ZIP: 27409-9421 Country: USA Phone: 888-662-7363 FAX: 336-931-7454 http://www.rfmd.com
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