Microwave Transistor provides over 90 W of saturated power.
June 24, 2008 -
Consisting of pair of GaN HEMT transistors in Gemini ceramic-metal package, CGH40090PP microwave transistor suits general-purpose military and industrial applications such as electronic warfare, radar, tactical radios, and EMC applications. It can operate over 500-2,500 MHz frequency range, and can be used in either push-pull or balanced amplifier designs.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Cree Announces Sample Release of 90 W GaN HEMT with Record Wideband Amplifier Efficiency
DURHAM, N.C. JUNE 11, 2008 - Cree, Inc. (Nasdaq: CREE) announces the sample release of a 90W, highly efficient GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, radar, tactical radios and EMC applications. This transistor provides superior performance over wide bandwidths compared to other technologies such as GaAs MESFET or Si LDMOSFET.
The new transistor, CGH40090PP, consists of a pair of GaN HEMT transistors providing over 90 watts of saturated power in a small, industry-standard Gemini ceramic-metal package. The exceptional performance of the transistor has been demonstrated in a balanced 500-MHz to 2500-MHz instantaneous bandwidth reference amplifier that offers 14 dB typical small-signal gain, 90 watts typical CW output power, and typical drain efficiencies of 55% over the entire band. This amplifier provides the best-known efficiency in the industry for any 5:1 bandwidth amplifier over this frequency range and power level.
"The CGH40090PP is an important addition to our general-purpose GaN HEMT product family that can be used in either push-pull or balanced amplifier designs. We are especially pleased that the reference design amplifier demonstrates state-of-the-art efficiency over such a wide frequency range. It is another example of how Cree's GaN HEMT products can enable highly efficient systems for our customers - the more efficient the amplifier, the less heat generated. This can positively impact system thermal design, cooling costs, size and weight, and DC power distribution," said Jim Milligan, director of RF and microwave products at Cree.
The CGH40090PP complements the range of Cree's broadband GaN HEMT general-purpose microwave transistors now available at power levels of 10W, 25W, 35W, 45W and 90W.
Please call (919) 287-7816 or visit the Cree website at www.cree.com for more information about Cree's GaN HEMT devices. Data sheets and sample ordering are also available: http://www.cree.com/products/wireless...
About Cree
Cree is leading the LED lighting revolution and setting the stage to obsolete the incandescent light bulb through the use of energy-efficient, environmentally friendly LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting retrofit solutions, and semiconductor solutions for backlighting, wireless and power applications.
Cree's product families include recessed LED down lights, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.
For additional product and company information, please refer to www.cree.com.
Contact: Michelle Murray
Corporate Communications
Cree, Inc.
michelle_murray@cree.com
(919) 313-5505
Contacts:
Marketing:
Michelle Murray
USA
Phone: 919-313-5505 E-mail this person Company Information: Name: Cree Inc. Address: 4600 Silicon Dr. City: Durham State: NC ZIP: 27703 Country: USA Phone: 919-313-5300 FAX: 919-313-5616 http://www.cree.com
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