|
|
Advertisement
|
|
IGBTs have punch through technology in 600 and 900 V devices.
May 29, 2008 -
Available as single devices or packaged with DQ Series fast, soft recovery diodes, Power MOS8® IGBT series exhibits low conduction losses, typ VCE(on) of 2.0 V (600 V) and 2.5 V (900 V), to increase overall circuit efficiency. Low switching losses enable operation at frequencies over 100 kHz. Target applications include solar inverters, high performance SMPS, and industrial equipment such as welders, battery chargers, and induction heaters.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.) |
|
|
| |
| |
|
Advertisement
|
|
|
Newsletters |
Your Gateway to a Fast
Changing World
Product News Alerts |
 |
Receive similar stories and other customized
news to keep you in the know on the products shaping
industry. |
Subscribe Free Today
Subscribe View
Sample |
Industry
Market Trends
Has Got It |
- Latest developments
- Trends
- Best practices
- Opinions & Commentary
|
 |
Get Ahead.
Get IMT.
Subscribe Free Today
Subscribe View
Sample |
|
|
|
|
Microsemi Announces New Power MOS 8 Punch Through Series IGBTs
IRVINE, Calif., May 20, 2008 -- Microsemi Corporation (Nasdaq:MSCC), a leading
manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, has announced a
new family of high speed Power MOS8® insulated gate bipolar transistors (IGBTs) featuring punch through technology in 600
and 900 Volt devices.
The new Power MOS8® IGBTs target applications that include solar inverters, high performance SMPS, and industrial
equipment such as welders, battery chargers, and induction heaters.
Key Features:
o Punch Through Technology
o Faster Switching
o High Efficiency - Low Saturation Voltage
o Short Tail - Minimizing Switching Losses
o Low VCE(ON)
The new Power MOS8® IGBT series exhibits low conduction losses VCE(ON), typ = 2.0V (600V) and 2.5V (900V), to increase
overall circuit efficiency. Low switching losses enable operation at frequencies over 100kHz--approaching the performance of
power MOSFETs but at lower cost.
Power MOS 8® IGBTs are available as single devices or packaged with DQ series fast, soft recovery diodes. Samples are
available now. In 1000 piece quantities, prices range from $2.09 to $7.04 for discrete devices and $3.01 to $9.44 for Combi's.
Technical datasheets are available on the Microsemi website at www.microsemi.com.
About Microsemi Corporation
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of
high performance analog and mixed signal integrated circuits and high reliability semiconductors. The company's
semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and
amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by
improving performance, reliability and battery optimization, reducing size or protecting circuits. The principal markets the
company serves include implantable medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs,
automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by
visiting its web site at http://www.microsemi.com.
SOURCE: Microsemi Corporation
Contacts:
Marketing:
Cliff Silver Corporate Communications Manager
USA
Phone: 949-221-7100
Company Information:
Name: Microsemi Corp.
Address: 8700 E. Thomas Rd.
City: Scottsdale
State: AZ
ZIP: 85251
Country: USA
Phone: 480-941-6300
FAX: 480-947-1503
http://www.microsemi.com
|
|
|
|
|
 |
ThomasNet News Advertisers
|
|
|
del.icio.us
DIGG
Facebook
Reddit
StumbleUpon
Twitter![[Get Copyright Permissions]](http://license.icopyright.net/images/icopy-w.gif){kind=small}
