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Transistors suit general-purpose broadband systems.

November 21, 2006 - Designed for linear and compressed amplifier circuits, 10 W CGH40010 and 45 W CGH40045 high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) suit applications in general-purpose broadband amplifiers and critical communications systems used by police, fire departments, and homeland security. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain efficiency when operated at 28 V.

Related categories: Electronic Components and Devices

Archive Press Release
(Products mentioned in this Archive Press Release may or may not be available from the manufacturer.)

Release date: November 1, 2006

Cree GaN HEMTs Extend Reach of General-Purpose Broadband Systems

DURHAM, N.C., Nov. 1 / -- Today Cree, Inc. (NASDAQ:CREE) announced that sample quantities of two new general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) are now available for order. These new components can be used to enable a variety of broadband applications to perform more efficiently than with standard LDMOS transistors.

The new 10-watt CGH40010 and 45-watt CGH40045 operate at up to 4 GHz with 14 dB of associated power gain and 65-percent drain efficiency when operated at 28 volts. Their efficiency, high gain and broad bandwidth make them ideal components for linear and compressed amplifier circuits. Targeted applications include general-purpose broadband amplifiers and critical communications systems used by police, fire departments and Homeland Security.

"Cree's GaN HEMT technology can significantly outperform existing gallium arsenide or silicon LDMOS technology in broadband systems that need wide bandwidth, low power or high efficiency performance," said Jim Milligan, Cree's product manager for wide bandgap radio frequency products.

Additional information about Cree wireless products may be obtained by calling Cree at 919-313-5300 or by visiting http://www.cree.com/wireless.

About Cree, Inc.

Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency.

Key to Cree's market advantage is its world-class materials expertise in SiC and GaN for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products. Cree drives its increased performance technology into multiple applications, including exciting alternatives in brighter and more- tunable light for general illumination, backlighting for more-vivid displays, optimized power management for high-current, switch-mode power supplies and variable-speed motors, and more-effective wireless infrastructure for data and voice communications.

Cree customers range from innovative lighting-fixtures makers to defense- related federal agencies. Cree's product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio-frequency/wireless devices. For product specifications, please refer to http://www.cree.com/.

First Call Analyst:
FCMN Contact: John_teague@cree.com

Source: Cree, Inc.

CONTACT: Media, Deb Lovig, Marketing Communications, +1-919-287-7505, or Deb_Lovig@cree.com, or Sales, Tom Dekker, Wireless Sales,
+1-919-313-5639, or Tom_Dekker@cree.com, both of Cree, Inc.

Web site: http://www.cree.com/
http://www.cree.com/wireless

Contacts:

Sales:
Tom Dekker
USA
Phone: 919-313-5639

E-mail this person

Marketing:
Deb Lovig
USA
Phone: 919-287-7505

E-mail this person

Company Information:
Name: Cree Inc.
Address: 4600 Silicon Dr.
City: Durham
State: NC
ZIP: 27703
Country: USA
Phone: 919-313-5300
FAX: 919-313-5616
http://www.cree.com

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