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N-Channel MOSFETs target VoIP applications.


November 30, 2009 - Models ZXMN15A27K and ZXMN20B28K N-channel MOSFETs feature breakdown voltages of 150 and 200 V, respectively. They withstand high pulse avalanche energy and commutation modes in Subscriber Line Interface Circuits (SLIC) environment and have low input capacitance, allowing them to be driven from SLIC controlled IC. Units are capable of driving line voltages beyond 150 V and supplying multiple subscriber lines at loop lengths exceeding 6 km.

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Diodes Incorporated Introduces MOSFETs Optimized for VoIP Applications


DALLAS - Nov. 11, 2009 - Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, has introduced a pair of N-channel MOSFETs, offering designers of Voice over Internet Protocol (VoIP) communications equipment a more rugged solution that significantly reduces circuit complexity and cost.

The ZXMN15A27K and ZXMN20B28K are specifically designed to meet the stringent requirements of the primary switch position in transformer based Subscriber Line Interface Circuits (SLIC) with DC/DC converters in a variety of VoIP applications, including voice over broadband systems, PBX systems, Cable and DSL gateways.

These devices feature breakdown voltages (BVDSS) of 150V and 200V, respectively, and will withstand the high pulse avalanche energy and commutation modes in the SLIC environment without the need for additional protection circuitry. Combined with the right choice of transformer, these MOSFETs are capable of driving line voltages beyond 150V and supplying multiple subscriber lines at loop lengths exceeding 6km.

The low input capacitance of these MOSFETs makes them easy to drive directly from the SLIC controlled IC with minimal or no buffering, further simplifying circuit design and reducing component count and cost. The ZXMN20B28K is also capable of low gate drive at logic level.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard & Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, serving the consumer electronics, computing, communications, industrial and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, amplifiers and comparators, Hall-effect sensors and temperature sensors, power management devices including LED drivers, DC-DC switching regulators, linear voltage regulators and voltage references, along with special function devices including USB power switch, load switch, voltage supervisor and motor controllers. The Company's corporate headquarters is located in Dallas, Texas. A sales, marketing, engineering and logistics office is located in Westlake Village, California. Design centers are located in Dallas; San Jose, California; Taipei, Taiwan; Manchester, England and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester; with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse and logistics offices are located in Taipei; Hong Kong; Manchester and Munich, Germany, with support offices located throughout the world.

For further information, including SEC filings, visit the Company's website at http://www.diodes.com.

Source: Diodes Incorporated

Company Contact:

Diodes Incorporated

Francis Tang

VP, Product Development

P: 972-385-2810

E: pressinquiries@diodes.com


Contacts:
View detailed contact information.


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