Monolithic Power MOSFET features integrated Schottky diode.
November 9, 2009 -
Using TrenchFET Gen III silicon, SkyFET® Si462DY delivers max RDS(on) of 3 mW at 10 V gate drive and 3.8 mW at 4.5 V. Device optimizes power conversion efficiency at light loads for mains-powered servers and battery-operated notebooks. Integration of Schottky into MOSFET silicon chip eliminates parasitic inductances that would be present if they were mounted to PCB as individual components or if separate MOSFET and Schottky diode components were co-packaged.
Vishay's New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance in SO-8 with TrenchFET® Gen III Technology
MALVERN, Pa. - August 10, 2009 - Vishay Intertechnology, Inc. (NYSE) today released the first of its monolithic MOSFET and Schottky SkyFET® products to use the company's latest TrenchFET® technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum rDS(on) of 3 milliohms at a 10-V gate drive and 3.8 milliohms at 4.5 V.
The new Si4628DY SkyFET will typically be used as the low-side power MOSFET in synchronous buck converters for notebook core voltage and VRM applications, graphic cards, point-of-load power conversion, and synchronous rectification in computers and servers. Its on-resistance times gate charge figure of merit (FOM), a key indicator of performance in such applications, is 26 % better at a 10-V gate drive and 34 % better at 4.5-V than the next best device in the SO-8.
The Si4628DY is designed to improve power conversion efficiency at light loads for both mains-powered servers and battery-operated notebooks. Under light-load conditions, the MOSFET in power converters is off, and current is conducting through the Schottky diode. Because the Schottky is integrated with the MOSFET, its forward voltage drop is much lower than the voltage drop across the intrinsic body diode of the MOSFET. This results in substantially less power loss when the MOSFET is turned off during dead time in a buck converter application.
A second improvement results from the lower reverse recovery charge (QRR) of the Schottky diode compared to the QRR of the body diode of the MOSFET. Vishay Siliconix SkyFET technology reduces QRR in the device by almost 75 % from the standard MOSFET body diode, which improves converter efficiency at light loads.
Finally, integration of the Schottky into the MOSFET silicon chip eliminates the parasitic inductances that would be present if these were mounted to the PCB as individual components or if separate MOSFET and Schottky diode components were co-packaged.
The improvement in efficiency enabled by these features translates directly into lower energy usage, and thus lower electric bills for facilities like server farms and longer battery life between charges for laptop computers.
Samples and production quantities of the Si4628DY are available now, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
SkyFET and TrenchFET are registered trademarks of Siliconix incorporated Company Information: Name: Vishay Intertechnology, Inc. Address: 63 Lincoln Hwy., P.O. Box 4004 City: Malvern State: PA ZIP: 19355 2143 Country: USA Phone: 610-644-1300 FAX: 610-296-0657 http://www.vishay.com
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