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Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.
Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.

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Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.


October 28, 2009 - Model Si8461DB MICRO FOOT® power MOSFETs offer on-resistance of 0.1 W at 4.5 V gate drive and are specified for maximum on-resistance values at 2.5, 1.8, and 1.5 V. Suitable for applications requiring higher input voltages, Si8465DB has gate-to-source voltage of 12 V with on-resistance of 0.104 W at 4.5 V and 0.148 W at 2.5 V gate drive. Both 20 V p-channel devices are designed for load switch, battery switch, and charger switch applications in portable devices.

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Vishay's New 1 x 1 mm Maximum MICRO FOOT® Devices Are Industry's Smallest Chipscale MOSFETs; Include First Device Under 1.2 mm² with 12 V Gate-to-Source Voltage


MALVERN, PENNSYLVANIA - Oct. 16, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today released two MICRO FOOT® power MOSFETs with maximum dimensions of 1 x 1 x 0.548 mm, which sets a new milestone as the smallest chipscale power MOSFETs yet.

The 20 V p-channel Si8461DB and Si8465DB will be used for load switch, battery switch, and charger switch applications in a wide range of portable devices, where their small size and height will help reduce the space occupied by power management circuitry and/or enable more functionality. Compared to the next smallest chipscale power MOSFET on the market, the 1 x 1 x 0.548 mm MICRO FOOT has a 9% smaller footprint.

On-resistance for the Si8461DB is 0.1 W at a 4.5 V gate drive, which represents a tenfold improvement over non-chipscale devices with similar footprint dimensions and thus provides a significant opportunity to conserve battery energy in portable devices. In addition to the 4.5 V rating, the Si8461DB is specified for maximum on-resistance values at 2.5 V, 1.8 V, and 1.5 V, which aligns the device with the smaller input signals common in portable systems. For applications requiring higher input voltages such as charger switches, the Si8465DB has a gate-to-source voltage of 12 V; on-resistance is 0.104 W at a 4.5 V gate drive and 0.148 W at 2.5 V.

Samples and production quantities of the Si8461DB and Si8465DB are available now, with lead times of 10 to 12 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.

MICRO FOOT is a registered trademark of Siliconix incorporated


Contacts:

Public Relations:
Wall Street Communications
Bob Decker
USA
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Company Information:
Name: Vishay Intertechnology, Inc.
Address: 63 Lincoln Hwy., P.O. Box 4004
City: Malvern
State: PA
ZIP: 19355 2143
Country: USA
Phone: 610-644-1300
FAX: 610-296-0657
http://www.vishay.com


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Other News from this company:
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Vishay's New-Generation, Ultra-Precision VHP100 Bulk Metal Foil Resistor is Shortlisted for Elektra 09 European Electronics Industry Awards
Model G4 Advanced Process Control Instruments Now Available with Remote Access via Web Interface
Vishay Releases Industry-First Gen. 5.0 High-Performance 45-V and 100-V Schottky Diodes in D-Pak Package With Current Ratings From 6 A to 20 A
Vishay's TrenchFET® Gen III Family of Power MOSFETs Selected as Finalist in EDN's 19th Annual Innovation Awards
Vishay's SMR1DZ and SMR3DZ Ultra-High-Precision Z-Foil Molded
Vishay's RNC90Z Military-Established, Bulk Metal® Z-Foil Reliability Resistors Combine Extended Resistance Tolerance Down to ±0.005%, TCR of ±0.2 ppm/°C, and ESD Immunity up to 25 kV
Vishay's TR8 MicroTan(TM) Tantalum Chip Capacitor Named as Winner of EDN China's Annual Innovation Award in Passive Component, Connector, and Sensor Category
Vishay Upgrades 5 V Infrared Receiver Series to Offer 15% Greater Sensitivity, 30% Reduction in Operating Current, Broader 3-5 V Power Supply Range, and Improved Pulse Width Accuracy and EMI and ESD Immunity
Vishay Receives Two Awards from Arrow Electronics
Vishay Wins 2008 EE Times ACE Award in Ultimate Products of the Year, Analog ICs Category
Vishay's Electro-Pyrotechnic Initiator Chip Resistor Named as Winner of EDN's 18th Annual Innovation Award
Vishay's HE3 Wet Tantalum High-Energy Capacitor Chosen as Product of the Year by Electronic Products China Magazine
Vishay Releases Royalty-Free Courier-115 Software Protocol Enabling Infrared Wireless Communication for Texas Instruments MSP430 MCU Platform
Vishay's 3-V Infrared Receiver Series Offers Enhanced Sensitivity, 70% Reduction in Operating Current, Broader 2.5-V to 5.5-V Power Supply Range, and Improved EMI and ESD Immunity
Vishay Semiconductor Products Now Available from Digi-Key
Vishay Receives Two Manufacturer of the Year Awards from National Electronic Distributors Association
Vishay TrenchFET® Power MOSFETs For OR-ing Applications Feature Industry-Best On-Resistance Down to 1.5 Milliohms in SO-8 Footprint Area with 20-V Drain-to-Source and Gate-to-Source Ratings
Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down to 29 Milliohms



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