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Power Modules feature silicon carbide diode technology.


June 11, 2009 - Suited for industrial, UPS, SMPS, and motor drive applications, SiC Power Module Series includes 5 SOT227-packaged modules with current ratings from 20-60 A, available in parallel and antiparallel configurations. For applications requiring 90 A current rating, 2 SP1 products are available with dual, independent diodes. Eight single-phase bridge rectifiers packaged in SP1 modules have ratings of 10, 20, 30, or 40 A. All models have breakdown voltage of 600 or 1,200 V.

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Microsemi Introduces Broad Line of Power Modules Featuring Silicon Carbide Diode Technology


Extends Silicon Carbide Leadership With 20 New SiC-Based Power Modules

IRVINE, Calif., June 9, 2009 -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has introduced a line of 20 new silicon carbide-based power modules in standard dual-diode and full-bridge configurations designed for a wide range of industrial applications.

"By integrating our SiC components into two very low-profile packaging options -- the industry standard SOT227 and our innovative SP1 -- we enable customers to create very compact high-frequency systems with low parasitics," said Philippe Dupin, Director of Power Module Products for Microsemi's Power Products Group located in Bordeaux, France. "These 20 new SiC diode power modules allow our customers to improve their system designs beyond the capabilities of today's conventional power solutions."

An SiC pioneer and innovator, Microsemi's new power module family takes advantage of SiC's superior performance at high operating temperatures for industrial, UPS, SMPS and motor drive applications. The family includes five standard dual-diode products in SOT227 packages, a dual-diode product in an SP1 package and four single-phase bridge rectifiers in SP1 modules.

The SOT227-packaged modules feature current ratings from 20A to 60A and breakdown voltages of either 600V or 1200V, available in either parallel or antiparallel configurations. The new modules can be used in phase-leg, common-anode or common-cathode implementations, and may be wired as a single diode at twice the current capability by connecting the package's two diodes in parallel.

For applications requiring a 90A current rating, Microsemi offers two
SP1 products with dual, independent diodes at either the 600V or 1200V breakdown voltages. Completing the family are eight single-phase bridge rectifiers packaged in SP1 modules having ratings of 10A, 20A, 30A or 40A, each at a voltage breakdown of either 600V or 1200V.

Dual-diode SiC Modules with Breakdown Voltages of 600V or 1200V

VRRM      DIODE     IF (A)     VF (V)     Package     Part Number
(V) Type Tc=100 C Tj=25 C

600 SiC 20 1.6 SOT227 APT2X20DC60J
30 1.6 SOT227 APT2X30DC60J
40 1.6 SOT227 APT2X40DC60J
50 1.6 SOT227 APT2X50DC60J
60 1.6 SOT227 APT2X60DC60J
90 1.6 SP1 APTDC902U601G


Single-phase, Full-bridge SiC Diode Modules with Breakdown Voltages of 600V or 1200V

VRRM      DIODE      IF (A)     VF (V)    Package     Part Number
(V) Type Tc=100 C Tj=25 C
600 SiC 10 1.6 SP1 APTDC10H601G
20 1.6 SP1 APTDC20H601G
30 1.6 SP1 APTDC30H601G
40 1.6 SP1 APTDC40H601G


Technical data sheets are available on the Microsemi website: www.microsemi.com. Samples are available immediately. Prices range from $36.89 to $214.21 in quantities of 1K to 5K.

About Microsemi

Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications.
More information may be obtained by contacting the company directly or by visiting its website at http://www.microsemi.com.

CONTACT:

Microsemi Corporation

Editorial Contact:

Cliff Silver, Corporate Communications Manager

(949) 221-7100



Contacts:

Marketing:
Cliff Silver Corporate Communications Manager
USA
Phone: 949-221-7100

Company Information:
Name: Microsemi
Address: 2381 Morse Ave.
City: Irvine
State: CA
ZIP: 92614
Country: USA
Phone: 949-221-7100
FAX: 949-756-0308
http://www.microsemi.com


More New Product News from this company:
IGBT Modules come in compact SP3 packages.
Power Modules replace transistors in radar applications.
MOSFETs/FREDFETs suit high-power switch mode applications.
RF Power Products operate at frequencies up to 30 MHz.
Pulsed Power Transistor targets avionics applications.
Pulse Transistor suits S-band radar applications.

Other News from this company:
Microsemi Awarded $1.6m R&D Contract by AFRL to Develop Silicon Carbide RF Power Products for Airborne Avionics
Microsemi Awarded $1.8m R&D Contract to Develop Silicon Carbide RF Power Products for Airborne Avionics
Microsemi to Demo Silicon Carbide Technology at 2006 IEEE MTT-S International Symposium
Microsemi RF/Microwave Technology on Display at 2006 IEEE MTT-S International Symposium
Microsemi to Acquire Advanced Power Technology, Inc.



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