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Logic Level Trench MOSFETs are optimized for efficiency.
Logic Level Trench MOSFETs are optimized for efficiency.

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Logic Level Trench MOSFETs are optimized for efficiency.


May 1, 2009 - Available in TO-220, D2PAK, and TO-262 packages, logic level gate drive trench HEXFET® power MOSFETs offer voltages from 40-100 V and can be driven from MCU or weak battery to deliver improved efficiency at light load conditions. On-state resistance of 1.7-4.5 mW @ 4.5 Vgs promotes thermal efficiency, while max current rating of 195 A provide more guard band from unwanted transients. Solutions are qualified to industrial grade and moisture sensitivity level 1.

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Trench MOSFETs feature 30 V, N-channel design.
Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.
MOSFET has maximum RDS(ON) of only 0.99 mW.
MOSFET Modules operate at high temperatures.
MOSFET Driver powers white LED backlighting.
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 See more related product stories:
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IR's New Logic Level Trench MOSFETs Deliver Benchmark Efficiency and Higher Current Rating


EL SEGUNDO, Calif. - International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a new range of logic level gate drive trench HEXFET® power MOSFETs featuring benchmark on-state resistance (RDS(on)) and high package current rating for high power DC motors and power tools, industrial batteries and power supply applications.

Utilizing IR's latest trench technology, the new family of benchmark MOSFETs offers a very low RDS(on) at 4.5V Vgs to significantly improve thermal efficiency. Additionally, the devices' higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. With a package current rating of up to 195A, the TO-220, D2PAK and TO-262 packages deliver more than 60 percent improvement over typical package ratings, while the 7-lead D2PAK further reduces RDS(on) by as much as 16 percent compared to the standard D2PAK to provide an even more robust option.

"Featuring benchmark RDS(on) , the new logic level gate drive trench MOSFETs can be driven from a microcontroller or weak battery to deliver improved efficiency at light load conditions, making them ideally suited for high current DC-DC switching and DC motor drive applications," said Brian LaValle, marketing manager for IR's Power Management Devices Business Unit.

The new family of logic level trench MOSFETs provides a voltage range of 40V to 100V. Qualified to industrial grade and moisture sensitivity level 1 (MSL1) the devices are available in all standard power packages including TO-220, D2PAK, TO-262, as well as a 7-lead D2PAK. The devices are offered lead free and are RoHS compliant.
Specifications
Part Number Package Bvdss RDS(on) Max @4.5Vgs Id @ 25C Qg Typ @4.5Vgs
(V) (mOhms) (A) (nC)
IRLS3034-7PPBF D2PAK-7 40 1.7 *240 108
IRLB3034PBF TO-220 40 2.0 *195 108
IRLS3034PBF D2PAK 40 2.0 *195 108
IRLS3036-7PPBF D2PAK-7 60 2.2 *240 91
IRLB3036PBF TO-220 60 2.8 *195 91
IRLS3036PBF D2PAK 60 2.8 *195 91
IRLS4030-7PPBF D2PAK-7 100 4.1 190 87
IRLB4030PBF TO-220 100 4.5 180 87
IRLS4030PBF D2PAK 100 4.5 180 87
* Package Limited


Additional information is available on the International Rectifier website at www.irf.com.

Availability and Pricing
The new devices are available immediately. Pricing for the IRLB3034PBF begins at US $1.26, IRLB3036PBF at US $1.29 and IRLB4030PBF at US $1.33, each in 10,000-unit quantities. Pricing is subject to change.

About International Rectifier
International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com.

Patent and Trademark Notice
IR® and HEXFET® are trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.

For more information, contact Graham Robertson, grobert1@irf.com 310-726-8512.


Contacts:

General Information:
Graham Robertson
USA
Phone: 310-726-8512
Send email  E-mail this person

Company Information:
Name: International Rectifier Corp.
Address: 233 Kansas St.
City: El Segundo
State: CA
ZIP: 90245
Country: USA
Phone: 800-981-8699
FAX: 310-322-3332
http://www.irf.com


More New Product News from this company:
IC suits low- to high-voltage automotive applications.
Driver IC targets Class D audio applications from 50-150 W.
IC enables energy-efficient DC/DC converters.
Voltage Regulators deliver 4, 8, and 12 A of output current.
N-Channel MOSFETs feature low on-state resistance.
DC-DC Converters feature input voltage range of 150-250 V.
Audio Power Amp Reference Design offers scalable output.
Output Power Monitor IC features digital I2C interface.
Single-Channel High-Side Drivers are automotive-qualified.

Other News from this company:
IR Introduces Improved 25V and 30V MOSFETs for Point of Load Synchronous Buck Converter Applications
IR Introduces Revolutionary GaN-Based Power Device Technology Platform
International Rectifier's iMOTION Design Platform Wins Prestigious Environmental Design Award
International Rectifier Grants License Agreement for DirectFET® Packaging Technology to Infineon Technologies



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