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Trench IGBTs minimize power dissipation.
Trench IGBTs minimize power dissipation.

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Trench IGBTs minimize power dissipation.


March 25, 2008 - Designed to reduce power dissipation up to 30% in UPS and solar inverter applications up to 3 kW, 600 V Insulated Gate Bipolar Transistors utilize field stop trench technology to minimize conduction and switching losses, and are optimized for switching at 20 kHz. Co-packaged with ultrafast soft recovery diodes, series has lower collector-to-emitter saturation voltage and total switching energy than punch-through and non-punch-through type IGBTs.


Related categories:   Electronic Components and Devices

Press Release
Release date: March 3, 2008


IR's 600V Trench IGBTs Reduce Power Dissipation Up to 30 Percent in UPS and Solar Inverter Applications


EL SEGUNDO, Calif. - International Rectifier, IR (NYSE: IRF), a world leader in power management technology, today introduced a family of 600V insulated gate bipolar transistors (IGBTs) that reduces power dissipation by up to 30 percent in uninterruptible power supply (UPS) and solar inverter applications up to 3 kW.

The new application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses, and are optimized for switching at 20 kHz with low short circuit requirements, enabling higher efficiency power conversion in UPS and solar inverter applications.

"Traditionally, IGBT devices have excessive switching losses at the frequencies used in UPS and solar inverters. IR's new Trench IGBT devices have lower switching energy coupled with low conduction losses. These lower losses provide higher efficiency, reducing the size of the unit and the cost of power generation to the end user," said Carl Blake, IR's product marketing director, Energy Saving Products.

Co-packaged with ultrafast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.

More information is available on the International Rectifier web site at http://www.irf.com/whats-new/nr080303.html

Availability and Pricing
Pricing for the devices begins at US$0.68 for the IRGB4059DPbF, US$0.82 for the IRGB4045DPbF, US$0.84 for the IRGB4060DPbF, US$1.00 for the IRGB4064DPbF and US$2.79 for the IRGP4063DPbF each in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.

About International Rectifier
International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com.

Trademark Notice
IR® is a trademark of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.

For more information, contact Graham Robertson, grobert1@irf.com 310-726-8512


Contacts:

General Information:
Graham Robertson
USA
Phone: 310-726-8512
Send email  E-mail this person

Company Information:
Name: International Rectifier Corp.
Address: 233 Kansas St.
City: El Segundo
State: CA
ZIP: 90245
Country: USA
Phone: 800-981-8699
FAX: 310-322-3332
http://www.irf.com

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Related keywords:   APPLICATION SPECIFIC  |  INSULATED GATE BIPOLAR TRANSISTORS  |  TRENCH IGBT


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