MOSBDs target DC-DC converters in portable devices.
January 31, 2008 -
Model TPCA8A02-H MOSBD(TM) devices feature drain-source voltage of 30 V, drain current of 34 A maximum, and RDS(ON) of 4.8 mW typ, in 5 x 6 x 0.95 mm SOP Advance package. Measuring 5 x 6 x 1.6 mm, TPC8A03-H offers drain-source voltage of 30 V, drain current of 15 A, and RDS(ON) of 5.1 mW. Both products integrate power MOSFET and Schottky Barrier Diode onto single die and utilize aluminum strap connections to reduce on-state resistance.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Toshiba Adds Fast, Low Resistance MOSBD(TM) Single Die MOSFET and Schottky Barrier Diode Devices for DC-DC Converters
Latest MOSBDs Based on Toshiba U-MOS V High Speed Process Increase Efficiency and Reduce Wiring Impedance and Circuit Board Space Compared to Discrete Devices
IRVINE, Calif., Jan. 23 / / -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced that the company has expanded its line-up of MOSBD(TM) devices, which integrate a power MOSFET and a Schottky Barrier Diode onto a single die to save board space, increase power efficiency and reduce wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode. Developed by Toshiba Corp., the two new MOSBDs are well suited for high efficiency DC-DC converter applications in notebook PCs, portable devices, and other electronics where efficient power management is required.
The new devices are based on U-MOS V, the fifth-generation process technology in the Toshiba fast switching series, which enables lower on-state resistance for low-side MOSFETs, and faster switching for high-side MOSFETs. Each of the MOSBDs utilizes Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to further reduce on-state resistance (RDS(ON)).
The addition of these two new MOSBDs to the current lineup provides a selection of drain current, RDS(ON) and package to meet a range of system design requirements. The TPCA8A02-H features drain-source voltage of 30V, drain current of 34A (max.), RDS(ON) of 4.8milliohm(1) (typ.), and low profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm. The TPC8A03-H features drain-source voltage of 30V, drain current of 15A (max.), RDS(ON) of 5.1milliohm(1) (typ.), and SOP-8 packaging, which measures 5mm x 6mm x 1.6mm.
Pricing and Availability
The 4.8milliohm (typ.) TPCA8A02-H in SOP-Advance packaging and the 5.1milliohm (typ.) TPC8A03-H MOSBD are available now, with samples priced at $0.55 and $0.50, respectively.
Toshiba's Discrete Products
Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: "2006 Worldwide Semiconductor Market Share Report," Gartner, released April 2007). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.
*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue Estimate, Dec. 2007). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com/, or from your TAEC representative.
(1) At 4.5V
Source: Toshiba America Electronic Components, Inc.
CONTACT: company contact, Poloi Lin of Toshiba America Electronic Components, Inc., +1-949-623-3098, poloi.lin@taec.toshiba.com
Public Relations:
MultiPath Communications
Jan Johnson
USA
Phone: 714-633-4008 E-mail this person
General Information:
Poloi Lin
USA
Phone: 949-623-3098 E-mail this person Company Information: Name: Toshiba America Electronic Components (TAEC) Address: 9775 Toledo Way City: Irvine State: CA ZIP: 92618-1811 Country: USA Phone: 949-455-2000 http://www.toshiba.com/taec/
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