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Asynchronous SRAMs provide 4 Mb capacity.


August 24, 2007 - Fabricated using 6T cell, 0.13 micron, CMOS technology, 4 Mb asynchronous SRAMs are organized as 512Kx8 (IS61C5128AX/IS64C5128AX) and 256Kx16 (IS61C25616X/IS64C25616X) devices with access times up to 10 nS and standby current down to 200 nA. Products operate from single 5 V, 10% power supply and have TTL compatible interface levels. Commercial, industrial, and automotive temperature ranges are available, and SRAMS can be ordered as lead-free.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)

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 See more related product stories:
Nonvolatile SRAM IC comes in 32-pin plastic SOIC package.
Memory enables multimedia-rich functions in mobile devices.
Asynchronous SRAM suits limited-space applications.
Mobile Fast Cycle RAM uses DDR burst mode operation.
Asynchronous SRAM provides 8 nS access times.
Memory Upgrades improve performance of ThinkPad systems.
Serial 1 Mbit nvSRAM incorporates real-time clock.
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Memory System offers self-test and self-repair.
16 Megabit SRAM takes radiation doses to 100 krad.


ISSI Announces 5V, 4Mbit Asynchronous SRAMs for Industrial, Automotive, Telecom, and Networking


SAN JOSE, Calif., August 13 -- Integrated Silicon Solution, Inc. (NASDAQ:ISSI), a leader in advanced memory solutions, today announced a line of 5V, 4Mbit asynchronous SRAMs. This new offering includes devices organized as 512Kx8 and 256Kx16 with access times as fast as 10nS and standby current as low as 200nA. Fabricated using 6T cell, 0.13micron, CMOS technology, this highly reliable process coupled with innovative circuit design techniques yield high-performance and low power consumption devices.

Commercial, industrial and automotive temperature ranges are available to support a wide variety of applications in the industrial, automotive, telecom, and networking markets that still require 5V operation. These devices operate from a single 5V, 10% power supply and have TTL compatible interface levels.

"The addition of these devices is part of ISSI's commitment to long term support of memory. In addition to 1.8V, 2.5V and 3.3V SRAMs, ISSI now has a wide variety of 5V SRAMs from 256Kb to 4Mb," said Sanjiv Asthana, ISSI's vice president of sales and marketing.

Price, Packaging, and Availability

For quantities of 10,000, the devices are priced at $3.50. The 512Kx8 IS61C5128AX and IS64C5128AX (automotive) are available in 36-pin SOJ (400- mil), 32-pin sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II JEDEC standard packages. The 256Kx16 IS61C25616X and IS64C25616X (automotive) are available in 44-pin SOJ and 44-pin TSOP-II JEDEC standard packages. These devices can be ordered as lead-free. Samples are available now, with volume production shipments beginning in September.

About ISSI

ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) digital consumer electronics, (ii) networking, (iii) mobile communications and (iv) automotive electronics. The Company's primary products are high speed and low power SRAM and low and medium density DRAM. The Company also designs and markets EEPROM, SmartCards and is developing selected non-memory products focused on its key markets. ISSI is headquartered in Silicon Valley with worldwide offices in China, Europe, Hong Kong, India, Korea and Taiwan. Visit our web site at http://www.issi.com/.

CONTACT: Ron Kalakuntla, +1-408-969-4675, ron_kalakuntla@issi.com, or Tom Doczy, +1-408-969-4620, tdoczy@issi.com, both of Integrated Silicon Solution, Inc


Contacts:

Public Relations:
Hayes Marketing
Larry Hayes
USA
Phone: 408-921-5806
Send email  E-mail this person

General Information:
Ron Kalakuntla
USA
Phone: 408-969-4675
Send email  E-mail this person

Company Information:
Name: Integrated Silicon Solution, Inc. (ISSI)
Address: 2231 Lawson Lane
City: Santa Clara
State: CA
ZIP: 95054 3311
Country: USA
Phone: 800-379-4774
FAX: 408-588-0805
http://www.issiusa.com


More New Product News from this company:
Automotive SDRAM supports A1 and A2 grade temperature ranges.
DDR DRAM provides data transfer of 1.6 Gbps.
Asynchronous SRAM provides 8 nS access times.
SDRAM is targeted for multimedia co-processors.
Memory Products offer RoHS compliance.
EEPROM Device suits automotive applications.

Other News from this company:
ISSI to Present at 10th Annual Needham Growth Stock Conference on January 9, 2008 in New York City
ISSI Announces Expansion in Asia with New Sales Offices in Singapore and India



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