May 4, 2006 - GaN-on-diamond semiconductor wafer features single GaN layer atomically attached to freestanding, 25 micron thick, polycrystalline CVD diamond substrate. Nanometer proximity of chip's active region to diamond reduces heat build-up by extricating heat from core at instant of generation, permitting high temperature resilience for high-power, high-frequency electronic, solid-state white lighting, military, and photonics applications.

Related categories: Materials and Material Processing

Archive Press Release
(Products mentioned in this Archive Press Release may or may not be available from the manufacturer.)

Release date: March 31, 2006

Group4 Labs Extends Ground-Breaking Gallium Nitride-on-Diamond® Wafer to 2-Inches

March 31, 2006 - Menlo Park, CA - Group4 Labs, LLC, an extreme materials developer and supplier, announces the world's first 2-inch gallium nitride (GaN)-on-diamond semiconductor wafer. The new 2-inch version of the recently introduced 10 x 10 mm GaN is the second product in the company's Xero Wafer(TM) family. Sharing the same breakthrough technology, the larger GaN-on Diamond wafer also features a single GaN layer (2-inches in diameter) atomically attached to a synthetic diamond substrate (also 2-inches in diameter). This permits unprecedented high temperature resilience for very high-power, high-frequency electronic, solid-state white lighting, military and photonics applications. The two-inch wafer is ideal for use in the conventional epitaxial growth of GaN and its aluminum and indium-based alloys.

The company's innovative technology enables the GaN layer to be atomically attached to a freestanding, proprietary, polycrystalline chemical-vapor-deposited (CVD) diamond substrate (25-microns thick). The GaN exposed is an atomically-smooth surface finish that is epi-ready for further epitaxial deposition. The device is commercially available as a freestanding 2-inch wafer or optionally on a disposable, silicon substrate to permit easy handling during wafer processing.

Group4 Labs' proprietary GaN-on-Diamond technology addresses the classic heat problem plaguing the high power and high-speed transistor industry: excessive heat build-up inside the chip's engine that ultimately leads to device failure. The new material system offer a unique solution by extricating heat from the chip's core almost at the instant that it is generated. This is due to the nanometer proximity of the chip's active region to diamond, a nearly perfect thermal conductor. CVD diamond's thermal conductivity is about 3X to 30X more than that of conventional semiconductors. Just a 3X improvement in the thermal conductivity of a transistor array's substrate could boost the array's power-density by 10X to 100X depending on device configuration. Group4 Labs' scientists have, for the first time, successfully attached a 2-inch gallium nitride compound semiconductor to the tough-to-handle diamond substrate.

According to Group4 Labs' CEO, Felix Ejeckam, "This wafer is a 2-inch extension of what we introduced last month." He continues, "It's specially targeted to makers of power amplifiers (for cellular base stations), microwave and millimeter-wave circuits, UV laser diodes and ultra-bright blue/green/white LEDs who want tremendous power and thermal performance at little or no additional cost, compared to currently available semiconductor solutions."

The new GaN-on-Diamond 2-inch wafers are currently sold for $5,000 - $7,000 per unit (depending on quantity) through the company's online store at www.Group4Labs.com/Products.

Group4 Labs, LLC (Menlo Park, CA) is an extreme materials company founded in April 2003. The privately-held company develops and manufactures extreme semiconductor materials for a wide variety of applications in the advanced electronics and photonics industries. For more information, please visit www.Group4Labs.com.

GROUP4 LABS, LLC
1600 Adams Drive, Suite 112
Menlo Park, CA 94025
Phone: 1-650-688-5760 X 1
Website: www.Group4Labs.com
email: sales@Group4Labs.com, technology@Group4Labs.com

Company Information:
Name: Group4 Labs LLC
Address: 1600 Adams Dr.
City: Menlo Park
State: CA
ZIP: 94025
Country: USA
Phone: 650-688-5760
http://www.group4labs.com

Story Tools

Go Back |

E-Mail | Print | Post

	View Company Profile at ThomasNet.com
	Company web site
	More news from this company
	Search for suppliers of: Semiconductor Materials Wafers
	Join the forum discussion at: Wired In

Related Stories:
Aug 19, 2008	Perfluoroelastomer Parts suit semiconductor manufacturing.
Aug 13, 2008	Wafer Backside Coating facilitates die attach processes.
Aug 5, 2008	Perfluroinated Elastomer withstands high temperatures.
Jul 29, 2008	Ultra-High Purity Alumina suits semiconductor applications.
Jul 17, 2008	Bonding Material accommodates ultrathin wafers.
Aug 6, 2007	Thermoplastic Compound withstands high temperatures.
Aug 24, 2006	Wafers feature diamond on silicon construction.
Feb 9, 2006	Flip Chip is designed for wafer bumping applications.
Jul 18, 2005	Die Attach Material bonds same size die stack packages.
Aug 23, 2004	Semiconductor Packaging Material meets industry standards.

More New Product News from this company:
May 11, 2006	GaN-on-Diamond Wafer has gallium facing surface.
Mar 16, 2006	Semiconductor Wafer addresses classic heat problems.

Brought to you by Thomasnet.com Browse ThomasNet Directory

News provided by ThomasNet Industrial Newsroom^® (TIN). TIN is a comprehensive source of new and timely product information in the industrial marketplace. TIN supplies new product information to the web sites, e-marketplaces and print publications that serve the industrial marketplace. For press release submissions please go to http://news.thomasnet.com/submitpr.html. BY ACCESSING, BROWSING AND/OR USING THIS WEB SITE AND/OR ANY WEB SITES PROVIDED BY ProductNews.com, YOU AGREE TO BE BOUND BY THE TERMS OF USE AGREEMENT.