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30-Die NIR LED Array offers beam angle of 30°.

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30-Die NIR LED Array offers beam angle of 30°.
30-Die NIR LED Array offers beam angle of 30°.

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July 14, 2010 - Model OD-850-30-030 NIR LED array features wavelengths from 840-865 nm, with peak wavelength of 850 nm and total optical power output of 16 W. Operating temperature range is from -20 to +100°C and maximum junction temperature is 125°C with thermal resistance, junction to case, of 0.8°C/W. Unit can be stored in temperatures from -40 to +125°C and is suitable for night vision systems and skin therapy applications.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release

Opto Diode Corp.
750 Mitchell Rd.
Newbury Park, CA, 91320
USA



Opto Diode Introduces High Power, 30-Die, Infrared LED Array


Newbury Park, CA - Opto Diode Corporation, a global supplier of advanced performance photodiodes and highly reliable, visible and IR LEDs, has developed the first in a series of high power LED arrays, the OD-850-30-030. The new 30-die near-infrared (NIR) LED array delivers more efficient operation and higher power with a narrow beam angle of 30 degrees. The device has a peak wavelength of 850 nm (min. 840 nm and max. 865 nm) and a total optical power output of 16 watts.

Ideal for night vision systems and skin therapy applications, Opto Diode's NIR light-emitting-diode array is available for shipping in OEM quantities by June 28, 2010.

Russ Dahl, director of sales and marketing for Opto Diode, notes, "Making an array results in a much more compact size, compared to using discrete components. This, of course, is critical in applications that have space limitations. Our 30-die NIR LED array also features a narrow beam angle which results in much higher intensities than could be achieved with a chip-on-a-board-type solution."

Thermal parameters for storage range from -40°C to 125°C, with the operating temperature range from -20°C to 100°C. The maximum junction temperature is 125°C with a thermal resistance, junction to case, of 0.8°C per watt.

For more information about the innovative near-infrared LED array, please visit www.optodiode.com.

Opto Diode Corporation (www.optodiode.com) based in Newbury Park, California, delivers high-performance, standard and custom photodetectors, and reliable, high quality infrared LEDs and visible LEDs. The company's domestic U. S. manufacturing plant includes a wafer fab and ensures delivery of volume quantities at competitive prices with short lead times. Opto Diode's rigorous quality control standards meet their customer's strictest requirements in a variety of industries, including test & measurement, biotechnology, medical, entertainment, military/defense, industrial, aerospace, automotive, R&D and more.
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