Latest New Product News from Opto Diode Corp.
Quadrant Photodiode offers 5 mm² active area in each quadrant.Opto Diode Corp. Newbury Park, CA 91320
Nov 22, 2013 Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max junction temperature is 70°C and lead-soldering temperature is 260°C at 0.080 in. from case for 10 sec.
Radiation-Hard Photodiode is suited for electron detection.Opto Diode Corp. Newbury Park, CA 91320
Oct 10, 2013 With circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is <2% after MJ/cm² of 254 nm and tens of kilojoules/cm² of 193 nm photon exposure. Typ values include 1.7 µsec rise time, 200 MΩ shunt resistance, and 4 nF capacitance.
Absolute Photodiode features 100 mm² active area.Opto Diode Corp. Newbury Park, CA 91320
Sep 19, 2013 Delivering 100% internal quantum efficiency, Model UVG100 is suited for applications that require extreme stability for detection of vacuum UV and extreme UV photons. Oxynitride front window ensures successful operation without performance degradation that occurs with high humidity. Under test conditions at 254 nm, responsivity is 0.08 min, 0.09 typ, and 0.13 max A/W. Additional specifications include max rise time of 10 µs at 10 V and minimum shunt resistance of 20 MΩ at ±10 V.
Infrared LED Illuminator offers high-power optical output.Opto Diode Corp. Newbury Park, CA 91320
Aug 23, 2013 Suited for night vision illumination tasks, OD-669-850 gallium aluminum arsenide (GaAlAs) infrared light emitting diode (IRLED) illuminator produces uniform optical beam and features optical output from 800–1,250 mW (typ) and peak emission wavelength of 850 nm. Spectral bandwidth at 50% is 40 nm typ, and half-intensity beam angle is 120°. All surfaces on standard 2-lead, TO-66 electrically-isolated package are gold plate. Operating and storage ranges are -40 to +100°C.
Multi-Element Photodiode suits electron detection, bolometry.Opto Diode Corp. Newbury Park, CA 91320
Jul 18, 2013 Supplied in 22-pin, dual in-line package with 100% internal quantum efficiency, 20-element AXUV20ELG is suited for measurement of minute amounts of radiant energy. It can also be used for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity measured in amperes per watt. Along with 0.75 x 4.1 mm active area and 3 mm² sensitive area per element, features include 25 V typ reverse breakdown voltage, 40 pF max capacitance, 200 nsec rise time, and 100 MΩ min shunt resistance.
Sixteen-Element Photodiode suits UV/EUV or electron detection.Opto Diode Corp. Newbury Park, CA 91320
May 21, 2013 Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mm² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and operating range is -10 to +40°C for ambient environments (-20 to +80°C for nitrogen or vacuum conditions).
SMT Photodiode can integrate into new/existing systems.Opto Diode Corp. Newbury Park, CA 91320
Jul 25, 2012 Suited for use in medical diagnostic applications, ODD-900-002 operates in spectral bandwidth from 400-1,100 nm with peak sensitivity of 940 nm. Typical responsivity is at 0.44 A/W, with typical reverse dark current at 5 nA and total capacitance at 25 pF typ. Operating from -25 to +85°C, photodiode can be stored at temperatures from -40 to +85°C and has soldering temperature of 260°C (5 sec max). Power dissipation is 150 mW at or below 25°C (free air temperature).
Surface Mount Photodiode includes daylight filter.Opto Diode Corp. Newbury Park, CA 91320
Jul 20, 2012 Featuring sensitivity from 730-1,100 nm with peak sensitivity at 940 nm, Model ODD-900-001 is suited for industrial photoelectric control applications. Electro-optical characteristics at 25°C include typical responsivity of 0.44 A/W, typical reverse dark current at 5 nA, total capacitance at 25 pF, and typical rise/fall times of 50/50 nSecs. Power dissipation is 150 mW or below at 25°C free air temperature.
Infrared Emitters have peak wavelength of 850 nm.Opto Diode Corp. Newbury Park, CA 91320
Apr 19, 2012 Based on gallium aluminum arsenide (GaAlAs) technology, OD-250 delivers uniform optical beam and has total output of 250 mW (typ) and min output of 160 mW. Spectral bandwidth is 40 nm at 50%, with half intensity beam angle at 110°. Suited for imaging in military and security applications, emitter features metal surfaces that are gold-plated and 4 wire bonds on die corners for redundancy. Standard 3-lead TO-39 package can be stored/operated in temperatures from -40 to 100°C.
GaAlAs IR Emitters provide uniform optical beam.Opto Diode Corp. Newbury Park, CA 91320
Apr 11, 2012 Designed especially for military imaging applications, Model OD-110W features total output power of 140 mW, with peak emission wavelength at 850 nm. Power dissipation is 1,000 mW at absolute max ratings of 25°C (case) with continuous forward current of 500 mA. Housed in hermetically sealed, 3-lead, TO-39 package with gold-plated surfaces, emitter has 4 wire bonds on die corners. Device operates from -40 to 100°C with peak forward current of 1.5 A and reverse voltage of 5 V.
Click below for more Product News from Opto Diode Corp.
Other Company News From Opto Diode Corp.
Jan 10, 2011
Opto Diode Announces Acquisition of International Radiation Detectors, Inc.
Dec 23, 2010
Opto Diode Offers Custom, High Quality LEDs, Made in USA
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