Latest New Product News from GaN Systems Corp.
Normally-Off 100V GaN Transistors come in low-inductance package.GaN Systems Corp. Ann Arbor, MI 48104
May 30, 2014 Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance.
Normally-Off 650 V GaN Transistors aid high-speed system design.GaN Systems Corp. Ann Arbor, MI 48104
May 30, 2014 Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance.
Other Company News From GaN Systems Corp.
Sep 04, 2014
Leading Gallium Nitride Developer GaN Systems Signs Exclusive Worldwide Deal with Mouser Electronics
Nov 01, 2013
GaN Systems Showcases Gallium Nitride Power Semiconductors at iPower 2013 - Presents Paper on Harnessing Performance Gains in the Packaging Industry
Aug 01, 2013
Gallium Nitride Power Switching Devices to be Shown by GaN Systems at ECCE Europe Conference on Power Electronics and Applications
Mar 18, 2013
APEI and GaN Systems Demonstrate High Efficiency DC-DC Boost Converter with Ultra-High Speed Gallium Nitride Switch
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