Power Transistor targets L-Band pulsed radar applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
May 14, 2013 Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages.

CMOS Driver suits microwave switching applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Apr 26, 2013 Housed in SOIC-8 package, single-channel MADR-009269 translates TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators. Output HIGH level ranges from 0–2.0 V to optimize intermodulation products of FET control devices. For driving PIN Diode Circuits, outputs are nominally switched between +5 V and -5 V. MADR-009269 utilizes high-speed analog CMOS technology to achieve low power dissipation at moderate to high speeds.

Low-Power EML Driver serves next gen CFP/CFP2 applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Mar 28, 2013 Supplied in 4 x 4 mm SMT package, MAOM-002203 consumes 0.75 W and offers typical rise and fall time of 12.5 psec. This electro-absorption modulator driver IC for 100G applications is driven with differential input signal that can range from 250–500 mVpp and provides single-ended output that can be controlled from 1.0–2.5 Vpp. Along with 28 Gbps max data rate, features include separate integrated high frequency coils that allow for biasing driver and EML.

Silicon PIN Limiter Diode targets L- and S-Band applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Mar 21, 2013 Operating in 50 MHz to 4 GHz frequency range, MADL-011008 is designed for use in passive limiter control circuits to protect sensitive receiver components such as low noise amplifiers, detectors, and mixers. Device provides 0.15 dB insertion loss, 20 dB input return loss, and 20 dB output return loss. Housed in 1.2 x 1.5 mm PDFN package, diode exhibits +40 dBm Peak and +30 dBm CW Power.

Power Amplifiers serve 13 and 15 GHz PtP radio applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Mar 08, 2013 Supplied in fully molded, 5 x 5 mm, plastic QFN package, MAAP-010516 and MAAP-010517 are comprised of 3-stage power amplifier with integrated, temperature-compensated, on-chip power detector. Both are suited for point-to-point (PtP) radios for cellular backhaul applications and feature on-chip ESD protection structures with DC bypass capacitors. Respectively, MAAP-010516/-010517 are optimized for performance over 12.75–13.25 GHz and 14.5–15.35 GHz ranges.

Broadband Diplexer targets CATV applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Mar 01, 2013 Housed in 27 x 13 mm surface mount package, 42/54 MHz Model MAFL-011013 is suited for space-constrained CPE applications. RoHS-compliant diplex filter device features 75 Ω characteristic impedance, 0.5 dB insertion loss, and 50 dB isolation. Typical applications include HFC amplifiers and nodes, ONTs, STBs, eMTAs, and cable modems.  

MMIC Power Amplifier serves high-power broadband applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Feb 25, 2013 Operating from 500 MHz to 3.0 GHz frequency range, MAAP-010168 is fully matched for input and output at 50 Ω, which eliminates need for sensitive external RF tuning components. This 10 W, 2-stage amplifier, fabricated using high-reliability pHEMT process, provides nominal gain of 24 dB with input and output return loss of 10 dB across frequency band. Features suit RF and microwave applications, such as repeater amplifiers, air traffic control and weather radar, and radio communication.

Low Noise Amplifier supports X-Band applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Feb 15, 2013 Housed in 3 x 3 mm PQFN surface mount package, MAAL-010528 GaAs MMIC LNA provides nominal gain of 20 dB, OIP3 linearity of 26 dBm, and mid-band noise figure supply of 1.6 dB over 8.0–12.0 GHz frequency band. Unit features self-bias architecture which requires user to apply only single positive supply. Internally matched to 50 Ω input/output, 60 mA amplifier is suited for V-Sat, radar, and microwave applications.

Directional Power Detectors come in 1.5 x 1.2 mm package.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Dec 17, 2012 Housed in surface mount plastic package with built-in temperature compensation circuits, Small Package Directional Detectors are suitable for power monitoring in point-to-point radios, aerospace and defense systems, radar, IMS, VSAT, and electronic warfare applications. Units require small bias current of less than 0.5 mA for proper performance. Fabricated on GaAs process featuring full passivation, detectors can be handled and placed with standard pick and place assembly equipment.

Digital Phase Shifter (6-bit) supports serial, parallel control.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Nov 21, 2012 Supplied in 4 mm, 24-lead PQFN package, MAPS-011008 GaAs pHEMT phase shifter suits C-Band Radar applications from 5.0–6.0 GHz. Product is controlled with single +5.0 V serial or parallel control line and provides 360° phase shift range with step size of 5.6°. Insertion loss is 4.0 dB, with ±0.5 dB attenuation variation and ±3.0° phase accuracy over 5.0–6.0 GHz range. Other features include 0.3 dB RMS attenuation error and 2° RMS phase error.