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Powerex, Inc.
173 Pavilion Lane
Youngwood, PA, 15697

Detailed Contact Information:
Powerex Launched PowerSim(TM) App for Android   Return to story
Company Information:
Powerex, Inc.
173 Pavilion Lane
Youngwood , PA  15697   USA
Phone: 724-925-7272
FAX: 724-925-4393
http://www.pwrx.com
  
 
Latest New Product News from Powerex, Inc.
Products or services this company supplies:
 
Click links to find other companies which supply the same products or services.
High Voltage IGBTs include 200 and 150 A dual modules.

High Voltage IGBTs include 200 and 150 A dual modules.

Powerex, Inc.    Youngwood, PA 15697
Dec 03, 2012 Developed for use on 4,160 Vac lines, QID3320002 (3,300 V/200 A) and QID4515002 (4,500 V/150 A) have respective isolation voltage values of 7.7KV RMS and 9.0KV RMS. Both models incorporate optimized thermal management system, with AIN ceramic substrate and copper baseplate, and offer creepage and clearance that meet IEC 60077-1. Suitable areas of use include utility power supplies, pulse power, traction drives, medium voltage industrial drives, and auxiliary power inverters.
Low-Profile SiC MOSFET Modules have multiple circuit topologies.

Low-Profile SiC MOSFET Modules have multiple circuit topologies.

Powerex, Inc.    Youngwood, PA 15697
Jan 27, 2012 Split dual SiC MOSFET Modules QJD1210010 and QJD1210011 feature multiple circuit topologies, including independent, dual, in parallel, common collector, and common emitter. Designed for use in high-frequency applications, products are rated at 100 A/1,200 V, have -175°C junction temperature, and isolated baseplate of copper or AlSiC. Both modules include 2 MOSFET Silicon Carbide transistors, each with reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode.
Hybrid IGBT Modules feature multiple circuit topologies.

Hybrid IGBT Modules feature multiple circuit topologies.

Powerex, Inc.    Youngwood, PA 15697
Oct 11, 2011 Combining NFH-Series Powerex IGBT with Zero Recovery® Schottky diode, split dual Si/SiC hybrid IGBT modules QID1210005 and QID1210006 are designed for hard switching applications upwards of 30 kHz and soft switching applications from 60-80 kHz. Individual modules feature 2 IGBT transistors, each having reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from heat sinking copper or AlSiC baseplate.
DC-DC Converter features 50 W capacity.

DC-DC Converter features 50 W capacity.

Powerex, Inc.    Youngwood, PA 15697
Oct 11, 2011 Designed for use as step-down DC-DC converter from rectified AC line between 380-600 Vac, Model VLA313-2450A features input voltage range of 400-900 Vdc. Electrical isolation voltage between input and output is 2,500 Vrms for 1 minute. Equipped with over-current protection, Model VLA313-2450A can also serve as on-board pre-regulator for PV inverters and other industrial control equipment.
Electric Power Module meets needs of hybrid, electric vehicles.

Electric Power Module meets needs of hybrid, electric vehicles.

Powerex, Inc.    Youngwood, PA 15697
Jun 06, 2011 J-Series transfer molded power module (T-PM), CT300DJH060, is primarily intended for hybrid and electric vehicle applications. This 600 V/300 A power module incorporates 2 Carrier-Stored Trench Gate Bipolar Transistor (CSTBT(TM)) IGBT chips and utilizes direct lead bonding technology for optimal reliability. Built to be completely Pb free, including terminal plating, design also offers optimized power and temperature cycle lifespans.
Silicon Diode Modules feature 11 and 6.5 KV blocking capability.

Silicon Diode Modules feature 11 and 6.5 KV blocking capability.

Powerex, Inc.    Youngwood, PA 15697
Mar 18, 2010 Designed to meet high voltage blocking and high current requirements, Models QRSB165001 and QRD6565001 each feature 2 ribbon-bonded, 67 mm diode elements, which provide 650 A of steady-state current. Units offer 11 KV/650 A single and 6.5 KV/650 A half-bridge configuration while providing 12 KV isolation to baseplate. Housed in corona-resistant package, modules are suited for DC power supplies, pulse power, front-end converters, and laser power supplies.
Single Fast Diode Module is rated to 600 V, 1,000 A FWD.

Single Fast Diode Module is rated to 600 V, 1,000 A FWD.

Powerex, Inc.    Youngwood, PA 15697
Mar 18, 2010 Developed for use on 230 Vac lines or 340 Vdc lines, QRS061K001 offers average current rating of 420 A and can be used for adding increased free-wheeling diode capability across Powerex IGBTs. Isolation voltage is rated at 3 kV RMS, and thermal management system incorporates AIN substrate with copper base. In addition to isolated mounting, features include recovery time TRR of 150 ns max. Applications include switching power supplies, inverters, choppers, and high-frequency rectifiers.
Dual High-Voltage IGBT is rated at 4,500 V/150 A.

Dual High-Voltage IGBT is rated at 4,500 V/150 A.

Powerex, Inc.    Youngwood, PA 15697
Nov 09, 2009 Developed for use on 4,160 Vac lines, QID4515001 is 4,500 V/150 A Dual High Voltage IGBT (HVIGBT) with isolation voltage of 10.2 kV rms. Integrated thermal management system incorporates AIN ceramic substrate and copper baseplate. In addition to use in utility power supplies, pulse power, and traction drives, applications for this product include medium voltage industrial drives, auxiliary power inverters, and other high voltage power supplies.
DC-DC Converters operate from rectified 380-480 Vac line.

DC-DC Converters operate from rectified 380-480 Vac line.

Powerex, Inc.    Youngwood, PA 15697
Nov 05, 2009 Models VLA312-2425 and VLA313-2450 step-down DC-DC converters feature capacity of 25 or 50 W, respectively, and provide 2,500 Vrms electrical isolation between input and output. Input voltage range is 475-850 Vdc. Featuring overcurrent and overvoltage protection, units are intended for use on board preregulator for industrial control equipment.
MOSFET Modules operate at high temperatures.

MOSFET Modules operate at high temperatures.

Powerex, Inc.    Youngwood, PA 15697
Oct 20, 2009 Model QJD1210006, with 50 A Schottky free wheeling diode, and QJD1210007, with 100 A diode, are rated 1,200 V and offer total power-loss reduction of 54% when operated at 20 kHz. Constructed in half-bridge configuration, units feature 100 A of silicon carbide MOSFET/switch with 2 switches/model. All components and interconnects are isolated from heat sinking baseplate, simplifying system assembly and thermal management. Products feature junction temperatures from -40 to +200°C.


Click below for more Product News from Powerex, Inc.

Next News Stories



Other Company News From Powerex, Inc.

Mar 13, 2013

Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales


Aug 30, 2012

Powerex Launched PowerSim(TM) App for Android


Aug 17, 2012

Powerex Completes New Automated Production Center


Oct 25, 2011

Powerex 6th Generation IGBT with CSTBT(TM) Technology and Tj(max) 175°C, Available in Conventional Packages for Easy Upgrade


Nov 17, 2009

Powerex Releases Simulator for Three Level Inverter Applications


Feb 01, 2007

Powerex NFM-Series Closes the Gap in Higher Frequency Applications


Feb 01, 2007

Powerex Launches New Web Site






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