F-RAM Memory Module operates with Freescale Tower System.

Ramtron International Corp.    Colorado Springs, CO 80921
Sep 21, 2012 Populated with Ramtron F-RAM core memory and integrated products, TWR-FRAM Module offers engineers that develop with Freescale's ARM® Cortex™-based Kinetis® and i.MX, ColdFire®, PowerQUICC™, QorIQ®, and other microcontroller and microprocessor solutions a platform to demonstrate, evaluate, and develop F-RAM into their designs. F-RAM inherently features fast single-cycle and symmetrical read/write speeds, gamma radiation tolerance, and immunity to electromagnetic noise.

Low-Energy Nonvolatile Memory consumes only 3 µA, typ.

Ramtron International Corp.    Colorado Springs, CO 80921
Feb 01, 2012 FM25P16 is 16 Kb serial nonvolatile memory that features serial peripheral interface and full bus operating speed up to 1 MHz. Low-energy device employs ferroelectric process that yields virtually unlimited endurance of 100 trillion read/write cycles and reliable data retention for 10 years. Manufactured on low-power 130 nm CMOS manufacturing process, it is targeted to power sensitive systems including wireless sensor nodes, remote metering, and health and fitness products.

FRAM device facilitates low power computing.

Ramtron International Corp.    Colorado Springs, CO 80921
Jan 13, 2012 Manufactured on low-power 130 nm CMOS manufacturing process, FM25V20, 2 MB serial F-RAM (ferroelectric random access memory) device includes serial I2C, serial SPI, and parallel memories. It features wide voltage operation of 2.0-3.6 V, standby current of 100 µA, and sleep mode current of 3 µA. FM25V20 features 100-trillion read/write cycles and is designed for applications including industrial controls, metering, medical, military, gaming, and computing applications.

High-Speed FRAM features industry-standard SPI interface.

Ramtron International Corp.    Colorado Springs, CO 80921
Oct 12, 2011 Operating at 5 V over -40 to +85°C range, nonvolatile FRAM - 4 Kb FM25040C, 16 Kb FM25C160C, and 64 Kb FM25640C - feature 1 trillion read/write cycles and perform write operations at bus speeds up to 20 MHz. Devices allow next bus cycle to commence immediately; data is written to memory array immediately after being received by device. Supplied in 8-pin, RoHS-compliant SOIC packag, products also feature write protection scheme that prevents inadvertent data writes to memory.

Serial F-RAM Memory replaces 64 Kb serial EEPROM.

Ramtron International Corp.    Colorado Springs, CO 80921
Jul 12, 2011 With 100 µA active current at 100 kHz and 4 µA typical standby current, 5 V Model FM24C64C performs at bus speed without write delays and supports up to 1 trillion read/write cycles. Housed in RoHS-compliant 8-pin SOIC package with industrial operating temperature of -40 to +85°C, Model FM24C64C features serial I2C interface and is suitable for industrial controls, metering, medical, military, gaming, and computing applications.

FRAM Processor integrates real time clock and TCXO.

Ramtron International Corp.    Colorado Springs, CO 80921
May 06, 2011 Suited for sensitive time keeping applications, FM31T378 comes in 14-pin SOIC package that integrates RTC, TCXO, 256 Kb non-volatile FRAM, and peripheral functions. Integration helps electronics manufacturers reduce part inventory, BOM, and board space requirements as well as manufacturing steps and potential points of failure. Supporting MCU- or MPU-based designs, included processor supervisor detects power supply faults and will initiate reset to escape software lockup conditions.

FRAM Memory features voltage range of 2.7-5.5 V.

Ramtron International Corp.    Colorado Springs, CO 80921
Feb 22, 2011 Products include FM24W256 W-family models with 256-Kbit serial I2C interface, as well as FM25W256 units with SPI interface, while parallel communication interface is available in 64-Kbit FM16W08 and 256-Kbit FM18W08 devices. Memory systems offer 100 trillion reads/write cycles and 38 yr data retention, and operate over industrial temperature range of -40 to +85°C. Packaging includes 8-pin SOIC for serial devices and 28-pin SOIC for parallel devices.

Wireless Memory Kit tests high volume mobile data collection applications.

Ramtron International Corp.    Colorado Springs, CO 80921
Nov 16, 2010 Used for evaluating automatic identification applications, MaxArias(TM) Wireless Memory kit incldues austriamicrosystems' AS3992 UHF RFID reader chip, associated firmware, and MaxArias Wireless Memory device. Functionality is aimed towards electronics system designers and value-added resellers that need to test mobile systems for high-volume data collection applications. Integrated analog frontend (AS3992) provides protocol handling for global ISO18000-6b/c 900 MHz RFID reader systems.

Wireless-Enabled FRAM delivers Gen2 RFID access.

Ramtron International Corp.    Colorado Springs, CO 80921
Aug 02, 2010 MaxArias(TM) wireless memory devices combine nonvolatile FRAM memory technology features with wireless access to enhance mobile data collection. Specifically, products offer up to 16 Kb nonvolatile FRAM memory with EPCglobal Class-1 Generation-2 UHF Air Interface Protocol Standard. Use with optimized antenna design enables power-up via energy harvested from RF field. Able to store up to 1,000 16-bit words of data, products operate over distances to 10 m at -13 dBm read/write sensitivity.

Parallel FRAM offers near unlimited write endurance.

Ramtron International Corp.    Colorado Springs, CO 80921
Aug 06, 2009 Supplied in RoHS-compliant, 28-pin SOIC package, FM28V020 features NoDelay(TM) writes and unlimited read/write cycles. It operates from 2.0-3.6 V, accesses page mode operation up to 40 MHz, and may be used as drop-in replacement for battery-backed SRAM. Able to operate over -40 to +85°C range, this 256 Kb (32K x 8) nonvolatile ferroelectric random access memory (FRAM) retains data after power is removed and offers extended data retention of over 10+ years.