Silicon Carbide MOSFET operates up to +225°C.

Cissoid    Mont Saint Guibert, 1435
Mar 11, 2013 Available in hermetically sealed TO-257 package, CHT-NEPTUNE is built for power converter applications in high-temperature and harsh environments. Unit has breakdown voltage in excess of 1,200 V and is capable of switching currents up to 10 A at max temperature. Switch can be controlled with typical gate voltage of -2 V/+20 V. With VGS=20 V, transistor's RDS-On exhibits 90 mΩ at 25°C and 150 mΩ at 225°C. Device features temperature-independent switching energy of less than 400 µJ at 600 V/10 A.

N-Channel MOSFET operates from -55 to +225°C.

Cissoid    Mont Saint Guibert, 1435
Dec 05, 2012 Available in TDFP hermetically sealed, ceramic SMD package with 5 x 5.5 mm footprint, Model CHT-NMOS8001 is capable of switching current up to 1 A or blocking voltage up to 80 V with drain cut-off current as low as 10 µA at 225°C. Device handles peak currents up to 3.3 A at 225°C in repetitive pulse conditions. With RDS-ON of 0.76 Ω at 25°C and total switching energy of 413 nJ at 40 V/1 A, logic-level device is suited for low- and medium-power switching, power management, and signal conditioning.

High-Speed, Rail-to-Rail Comparator operates from -55 to +225°C.

Cissoid    Mont Saint Guibert, 1435
Jun 27, 2012 Supplied in 5 x 5.5 mm TDFP SMT hermetically sealed ceramic package, VOLGA offers rail-to-rail input/output capability as well as shutdown mode that places device in low power consumption mode when comparator function is not needed. Internal hysteresis promotes noise immunity, and output implements push-pull CMOS stage that can sink or source up to 16 mA. Requiring 5 V (±10%) power supply, device has typ propagation delay of less than 30 nsec at 20 mV overdrive.

Asynchronous Binary Counter operates from -55 to +225°C.

Cissoid    Mont Saint Guibert, 1435
Mar 29, 2012 Operating with supply voltage of 3.3-5 V, GALAXY CHT-74-4040 can be used as frequency divider with division rate up to 4,096. Counter features typical propagation delay of 19 nsec, low quiescent current of 21 µA max, and output drive capability of 4 mA max. Available in ceramic CSOIC16 and CDIL16 hermetic packages, 12-stage asynchronous counter is suitable for clock generation and clock modules used in down-hole tools as well as aerospace/defense systems.

Adjustable 500mA LDO Voltage Regulator handles temps to 225°C.

Cissoid    Mont Saint Guibert, 1435
Mar 09, 2012 Supplied in 5 x 5.5 mm SMD ceramic TDFP, CHT-VEGA low dropout, linear, voltage regulator is suited for embedded power supplies that must survive high-temperature, harsh environments or that require extended lifetimes. Product operates from -55 to +225°C and delivers regulated output with up to 500 mA from 5 V ±10% input. Output voltage can be adjusted from 1.2-3.3 V, and total output voltage accuracy under all operating conditions is better than ±5%.

Small-Signal Diode features high-temperature design.

Cissoid    Mont Saint Guibert, 1435
Jun 29, 2011 Housed in hermetically sealed metal can TO-18 package, CHT-GANYMEDE includes 2 diodes connected in series that can sustain reverse voltage of 80 V, have max forward current of 300 mA at 225°C, and are suitable for operation from -55 to +225°C. Diodes also feature small junction capacitance of 8.5 pF at 25 V reverse voltage and low leakage current of 8.9 µA at 80 V reverse voltage and 225°C. General-purpose component is suited for clamping as well as low-current rectification and sensing.

Transceiver IC Evaluation Kit offers 2.5 kV galvanic isolation.

Cissoid    Mont Saint Guibert, 1435
May 04, 2011 Incorporating 2 CHT-RHEA dual-channel, full duplex transceiver ICs and 4 tiny pulse transformers on 2 x 1.8 in. PCB, EVK-TIT6443 Evaluation Kit achieves data rate up to 2 Mbps with transmission delays lower than 100 ns over full chain. ICs come in ceramic packages guaranteed for -55 up to +225°C operation. Offering digital signal isolation, kit is suited for isolated gate drivers, IGBTs, and SiC switches, as well as isolation of industrial busses, A-D converters, and sensor interfaces.

Power Driver Evaluation Kit features high-temp operation.

Cissoid    Mont Saint Guibert, 1435
Apr 27, 2011 Built from 200°C polyimide PCB, EVK-TIT9036 Evaluation Kit is populated with CHT-THEMIS and CHT-ATLAS ICs, which consist of controller and push-pull driver stages of power transistors, respectively. Housed in ceramic packages, ICs operate from -55 to +225°C and are designed to drive SiC MOSFETs, JFETs, Silicon IGBTs and MOSFETs, and GaN power switches. Current output is controllable through 2 distinct channels capable of sourcing/sinking up to 4 A total to gate of power transistor.

Triple Op-Amp with Voltage Reference operates from -55 to +225°C.

Cissoid    Mont Saint Guibert, 1435
Apr 12, 2011 Supplied in SMT hermetically sealed ceramic SOIC16 package, RUBY features 5 V voltage reference that provides initial accuracy of ±2% and high stability with temperature (< 500ìV/°C). Integrated op-amps are configurable as instrumentation amp with external resistors, while 5 V voltage reference can provide up to 25 mA for complete bridge excitation in sensor applications. Operating from 6-20 V supply and consuming of 600 µA each at 225°C, op-amps provide stable gain-bandwidth product.

SiC Power Switch features 0/5 V logic-level gate control.

Cissoid    Mont Saint Guibert, 1435
Apr 01, 2011 Housed in hermetically sealed TO-254 metal package, 600 V CHT-JUPITER is guaranteed for operation from -55 to +225°C. Silicon carbide, normally-off switch is rated for 1 A drain current at 225°C and offers on-resistance ranges from 0.7 W at 25°C to 1.25 W at 225°C. Input capacitance is typically 430 pf, while gate leakage and drain off currents are 160 nA and 250 µA, respectively, at 225°C.