Peregrine Semiconductor Wins 2016 ECN IMPACT Award
UltraCMOS® PE42723 High Linearity RF Switch Named a Market Disruptor
SAN DIEGO, Oct. 13, 2016 -- Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces that the UltraCMOS® PE42723 high linearity RF switch has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist in the microwaves RF category, and the PE29100 gallium nitride (GaN) field-effect transistor (FET) driver was recognized as a finalist in the power sources conditioning devices category. Winners were announced today, Oct. 13, during the awards ceremony.
"For almost three decades, Peregrine has been on the cutting edge of delivering game-changing products to the electronics market," says Kinana Hussain, Peregrine's director of marketing. "It is truly an honor to be recognized with an ECN IMPACT Award, especially in the coveted market disruptor category. Products like the PE42723 enable the cable industry to deliver equipment that is fully compliant with today's stringent communication standards."
The ECN IMPACT Awards recognize the products and services that have the greatest impact on the electronic components industry. The market disruptor category highlights a product that forever changed the electronic engineering industry or a particular vertical within the industry.
The PE42723 is an RF switch that boasts the highest linearity specifications on the market today. An upgraded version of the successful PE42722, this new RF switch offers enhanced performance in a smaller package. Like its predecessor, the PE42723 exceeds the linearity requirements of the DOCSIS 3.1 cable industry standard and enables a dual upstream/downstream band architecture in the next generation cable customer premises equipment (CPE) devices.
The PE29100 is the world's fastest GaN FET driver. Built on Peregrine's UltraCMOS technology, this new GaN driver empowers design engineers to extract the full performance and speed advantages from GaN transistors. Designed to drive the gates of a high-side and a low-side GaN FET in a switching configuration, the PE29100 delivers the industry's fastest switching speeds, shortest propagation delays and lowest rise and fall times to AC-DC converters, DC-DC converters, class D audio amplifiers and wireless-charging applications.
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ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market's biggest challenges, such as linearity. By delivering best-in-class performance and monolithic integration, Peregrine's product portfolio is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 280 issued and pending patents and has shipped over 3.5 billion UltraCMOS units. For more information, visit http://www.psemi.com.
The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.
Editorial Contact:
Elizabeth Brown
Peregrine Semiconductor
Phone: 619.993.4648
pr@psemi.com
SOURCE Peregrine Semiconductor Corp.
Web Site: http://www.psemi.com
