GaN Systems Showcases High Current 650V, 100A Gallium Nitride Power Transistors for First Time at Energy Conversion Congress and Expo
Sampling now with major solar, industrial and automotive customers worldwide; new customer applications on display
OTTAWA, Ontario, – GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, is displaying its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe. Hosted by CERN in Geneva from September 8 – 10, this important conference and exhibition brings together leading figures in power electronics from industry and experts from research and academic institutions to share knowledge and display cutting-edge developments in power technology.
On Booth 1 Level 0, visitors will be able to see GaN Systems’ GS66540C high current power devices on show for the first time. Part of the company’s family of 650V gallium nitride power transistors based on its proprietary Island Technology®, these high density devices achieve extremely efficient power conversion with fast switching speeds of >100V/nS and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX™ packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets. The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Parts are now sampling with major customers, including OEMs and Tier 1 manufacturers, and are being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage. Also on display at EPE’15, GaN systems will show multiple customer platforms, including an exciting 2kW commercial vehicle inverter from the leading global transportation technology company, Ricardo.
GaN Systems is the first company to have developed and productised a comprehensive portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. GaN Systems’ Island Technology® die design, combined with the extremely low inductance and thermal efficiency of GaNPX™ packaging and Drive Assist™ technology, provides their GaN E-HEMTs with 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.
About GaN Systems
GaN Systems is a fabless semiconductor company that is the first place systems designers go to realize all the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching transistors for a wide variety of markets. GaN Systems’ unique Island Technology® addresses today’s challenges of cost, performance, and manufacturability resulting in devices that are smaller and more efficient than other GaN design approaches. The company is headquartered in Ottawa, Canada. For more information, please visit: www.gansystems.com.
More Information
Tracy Lamb
Corporate Communications
GaN Systems Inc.
+1 (613) 686-1996 ext. 149 (office)
tlamb@gansystems.com
www.gansystems.com
For press enquiries:
Anna Johnston
PR Account Manager
BWW Communications
Tel.: +44 1491-636393
anna.johnston@bwwcomms.com
