Schottky Diodes has D-Pak current capability up to 20 A.
Press Release Summary:
Built on Submicron Trench Technology, Gen. 5.0 high-performance 45 and 100 V schottky diodes feature maximum forward voltage drops at +125°C of less than 0.54 V typical at 6 and 20 A for 45 V devices, and less than 0.65 V at 10 and 20 A for 100 V devices.. Reverse leakage at +125°C is 3 mA and 7 mA for 45 V diodes and 4 mA for 100 V diodes. Models included are 6CUT04, 6CWT04FN, 10UT10, 10WT10FN, 20CUT10, 20CWT10FN, 20UT04 and 20WT04FN.
Original Press Release:
Vishay Releases Industry-First Gen. 5.0 High-Performance 45-V and 100-V Schottky Diodes in D-Pak Package With Current Ratings From 6 A to 20 A
Products mentioned:
o 6CUT04
o 6CWT04FN
o 10UT10
o 10WT10FN
o 20CUT10
o 20CWT10FN
o 20UT04
o 20WT04FN
New Devices Built on Submicron Trench Technology Feature Maximum Junction Temperature to +175 °C, Very Low Typical Forward Voltage Drop Down to < 0.54 V, and Low Reverse Leakage Down to 3 mA
MALVERN, PENNSYLVANIA. - Feb. 18, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today launched four new Gen. 5.0 high-performance 45-V and 100-V Schottky diodes that set a new standard in the industry by extending the D-Pak current capability up to 20 A. Built on submicron trench technology, the devices are suitable as stand-alone packages for high-efficiency, high-density solutions, as well as offering a cost-effective and compact replacement for the D2-Pak package. RBSOA is available for tight and cost-effective designs.
The 6CWT04FN, 10WT10FN, 20CWT10FN, and 20WT04FN offer a maximum junction temperature to +175 °C, extremely low forward voltage drop, and low reverse leakage, allowing designers to increase power density in automotive, solar energy, and other high-temperature applications. All four devices are also available in I-Pak versions.
The Schottky diodes released today feature maximum forward voltage drops at +125°C of < 0.54 V typical at 6 A and 20 A for the 45-V devices, and < 0.65 V at 10 A and 20 A for the 100-V devices. Reverse leakage at +125°C is 3 mA and 7 mA for the 45-V diodes and 4 mA for the 100-V diodes, with very tight parameter distribution. The devices offer optimized VF versus IR trade-off for increased system efficiency.
The diodes are optimized for ac-to-dc secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, dc-to-dc module, and solar photovoltaic bypass diode applications. Typical end products include high power density SMPS; adaptors for desktop PCs; servers; consumer electronics like PDPs, LCDs, and high-efficiency audio systems; and mobile electronics such as notebook computers, cell phones, and portable media players. The diodes are AEC-Q101 qualified for automotive drives and controls
A high and stable breakdown voltage of 57 V typical for the 45-V devices, and 118 V typical for the 100-V devices, accommodates voltage spikes and optimizes power density, which is increased in the diodes by 25 %. The devices feature 30 % increased ruggedness for reverse avalanche capability, with parts 100 % screened in avalanche, and negligible switching losses.
Samples and production quantities of the new Schottky diodes are available now, with lead times of six to eight weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.
Sales contact: www.vishay.com/diodes/rectifiers/high-performance-gen-5/sales
