Toshiba Announces Low ON-Resistance Power MOSFETs for Lithium Ion Batteries in Smaller, Second-Generation Smart Thin Package |
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Toshiba America Electronic Components (TAEC)
9775 Toledo Way
Irvine, CA, 92618-1811
USA
Press release date: February 20, 2008
Power MOSFETs in STP2 Package Series Are 20 Percent Smaller with Very Low ON-Resistance to Improve Lithium Ion Battery Efficiency
IRVINE, Calif., Feb. 20 /-- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced the availability of its second-generation Smart Thin Package (STP2) surface mount packaging for power MOSFETs. The STP2 package is 20 percent smaller than the original STP package, and achieves one of the industry's lowest values for ON-resistance x mounting area. As a result of the low resistance figure, the device enables improved power efficiency in battery packs. To save critical printed circuit board space, the new package measures only 3.8mm x 1.6mm x 0.60mm.
TAEC also announced two ultra-low resistance power MOSFETs in the new STP2 package, TPCT4203 and TPCT4204, and a third MOSFET in a PS-8 package, TPCP8202, which measures 2.8mm x 2.9mm x 0.8mm. Developed by Toshiba Corp. (Toshiba), the three new dual N-channel MOSFETs are well-suited for lithium ion battery applications in mobile phones, digital still cameras, camcorders and other portable consumer electronics products that require small battery size yet long hours of operation.
Toshiba's two new STP2 MOSFETs feature a small footprint area of only 6.08mm(2). The TPCT4203 carries a DC source current (I(S)) of 6 amperes (A), a pulse drain current (P(D)) of 24A, a gate-source voltage of 12volts (V), and low leakage current (I(SSS)) of just 10 microamps. The TPCT4204 carries a source current of 6A, a pulse drain current of 24A, a gate-source voltage of 12V, and I(SSS) of just 10 microamperes.
The TPCT4203 MOSFET comes with low source-source ON resistance (R(SS)(ON)) of 25.5 milliohms typ. (at V(GS)=4.5V, I(S)=3A) and source-source voltage of 20V, while the TPCT4204 features RSS (ON) of 30.5milliohms typ. (at V(GS)=4.5V, I(S)=3A) and source-source voltage of 30V.
The TPCP8202 in PS-8 packaging has a footprint area of 8.12mm(2), and carries a DC drain current of 5.5A, a pulse drain current of 22A, a gate-source voltage of 12V, and low leakage current (I(DSS)) of just 10microamps. While the STP2 devices are of common drain type, the TPCP8202 contains two completely independent N-channel MOSFETs, making it more suitable for designs with various configurations. The device also offers low drain-source ON resistance (RDS (ON)) of 19milliohms typ. (at V(GS)=4.5V, I(D)=2.8A) and drain-source voltage (V(DSS)) of 30V.
"Our advances in innovative packaging, coupled with our expertise in power MOSFET technologies, simultaneously deliver space saving and efficiency improvement to protection circuit modules, contributing to longer battery life in portable devices," said Jeff Lo, business development manager for power devices in the discrete business unit at TAEC.
Pricing and Availability All three of the new Toshiba MOSFETs for Li-ion battery applications are available now. Samples of the TPCT4203 and TPCT4204 MOSFETs with STP2 packaging are priced at $0.37 each, respectively. Samples of the TPCP8202 device in PS-8 packaging are priced at $0.45.
Technical Specifications -- Toshiba MOSFETs for Lithium Ion Batteries
Product Characteristics TPCT4203 TPCT4204 TPCP8202
Circuit Configuration Dual N-channel, common drain Dual N- channel Process Technology U-MOS IV U-MOS IV U-MOS IV Package STP2 STP2 PS-8 Dimensions (mm) 3.8 x 1.6 x 0.6 3.8 x 1.6 x 0.6 2.8 x 2.9 x 0.8 Footprint (mm(2)) 6.08 6.08 8.12 Source-Source Voltage (V(SSS))(max.) 20V 30V N/A Drain-Source Voltage (V(DSS))(max.) N/A N/A 30V Gate-Source Voltage(V(GSS)) (max.) ±12V ±12V ±12V Source-Source ON- resistance 25.5milliohms 30.5milliohms R(SS)(ON)(typ.) V(GS)=4.5V, V(GS)=4.5V, N/A I(S)=3A I(S)=3A Drain-Source ON-resistance 19milliohms R(DS)(ON)(typ.) N/A N/A V(GS)=4.5V, I(D)=2.8A Drain DC (max.) 6A 6A 5.5A Current Pulse (max.) 24A 24A 22A Leakage Current (max.) 10microamps 10microamps 10microamps Channel Temperature (max.) 150°C 150 °C 150 °C Storage Temperature -55 - 150°C -55 - 150°C -55 - 150°C
Toshiba's Discrete Products Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: "2006 Worldwide Semiconductor Market Share Report," Gartner, released April 2007). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets
*About TAEC Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue Estimate, Dec. 2007). For additional company and product information, please visit http://www.toshiba.com/taec/.
Source: Toshiba America Electronic Components, Inc.
CONTACT: Jan Johnson of MultiPath Communication, +1-714-633-4008, jan@multipathcom.com, for Toshiba America Electronic Components, Inc.;or Poloi Lin of Toshiba America Electronic Components, Inc., +1-949-623-3098, poloi.lin@taec.toshiba.com
Web site: http://www.toshiba.com/taec http://www.chips.toshiba.com/
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