STMicroelectronics Extends NOR Flash Memory Subsystems Portfolio with First 512Mbit-based Solutions in 90nm Technology
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Press release date: November 29, 2005
256- and 512-Mbit NOR-Flash create up to 1Gbit subsytems in multi-chip package combinations with PSRAM or LPSDRAM in single BGA
GENEVA, Nov. 29 / -- STMicroelectronics (NYSE:STM), among the world's largest suppliers of NOR Flash devices and a leading developer of technologies based on fine-process geometries, today announced NOR Flash-based memory subsystems intended for the latest generation of mobile phones. The multi-chip subsystems combine ST's new monolithic 256- and 512-Mbit NOR Flash devices with Pseudo-Static Random Access Memory (PSRAM) or Low-Power Synchronous Dynamic Random Access Memory (LPSDRAM) in a single package. Developed and manufactured in ST's state-of-the-art 90nm process, the new NOR Flash memory subsystems offer faster code execution and more cost-effective pricing for 3G handheld applications.
The memory subsystems, available in multi-chip packages (MCP), come in a range of combinations, including:
o 512 Mbit Flash + 64 Mbit PSRAM (M36P0R9060); o 512 Mbit Flash + 128 Mbit PSRAM (M36P0R9070); o 512 Mbit Flash + 128 Mbit LPSDRAM (M39P0R9070):
Triple-stack versions with up to 1 Gbit of Flash and multi-chip packages based on the new 256Mbit NOR Flash device extend the offering.
Driving up performance, ST's new NOR Flash memories support read speeds of up to 133-MHz, 2X faster than currently available devices in the market. Additionally, the program throughput of up to 0.5MByte/s outperforms existing NOR Flash solutions by a factor of three. "The superior read speed of our new NOR Flash devices enable the fastest chipsets and allow fast code execution in advanced cellular platforms," said Marco Dallabora, VP Memory Products Group STMicroelectronics. "Moreover, the 0.5Mbytes/s write speed with extremely low power consumption, supports high-resolution cameras in mobile phones."
ST's new Flash offering combines the 90nm lithography with proven advanced memory technologies, such as multi-level cell (MLC) Flash and the multiple-bank architecture, tailored to the requirements for high density, small size, reduced power consumption, and flexibility in 3G multimedia handsets.
On the package level, the integration of different memory types within a single small package saves board space and improves reliability for manufacturers. Also, the ability to pack large amounts of memory into a very small volume is essential for the oncoming 3G applications, handling multimedia content and fast internet connectivity.
Software support, to integrate data and file management capabilities into customers' platforms, complete the ST's Memory Subsystems offer, shortening end applications time-to-market.
All the combinations included in the two new families are available now and offered in a range of BGA packages: the NOR Flash + PSRAM devices in LFBGA107, 8 x 11mm (ZAC) and the NOR Flash + LPSDRAM in xFBGA105, 9 x 11mm (ZAD). US pricing in volume quantities is: $12 for the M36P0R9060; $14 for the M36P0R9070; and $13 for the M39P0R9070. Full datasheets on all the devices will be available on st.com shortly.
STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2004, the Company's net revenues were $8.76 billion and net earnings were $601 million. Further information on ST can be found at http://www.st.com/.
CONTACT: Michael Markowitz, of STMicroelectronics, +1-212-821-8959, firstname.lastname@example.org
Web site: http://www.st.com/