ON Semiconductor Expands Medium Voltage Power MOSFET Portfolio with 8 New Devices for Consumer and Industrial Applications |
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ON Semiconductor, LLC
5005 E. McDowell Rd.
Phoenix, AZ, 85008
USA
Press release date: November 11, 2008
Robust and rugged new 60 volt MOSFETs are designed for medium voltage, switching applications in power supplies, converters, PWM controls and bridge circuits
ELECTRONICA - Munich, Germany - Nov. 11, 2008 - ON Semiconductor (Nasdaq: ONNN), a leading global supplier of high performance, energy efficient, silicon solutions has introduced eight new power MOSFET devices specifically designed for medium voltage switching applications. These MOSFETs are ideal for use in DC motor drives, LED drivers, power supplies, converters, pulse width modulation (PWM) controls and bridge circuits where diode speed and commutating safe operating areas are crucial and benefit from an additional safety margin against unexpected voltage transients that these devices provide.
The new 60 volt (V) devices are single N-channel MOSFETs offering lower RDS(on), which minimizes power dissipation. The devices also provide low gate charge and low gate charge ratio that reduces conduction and switching losses. These performance features combine to make the power subsystem more efficient.
"The introduction of these medium voltage devices expands ON Semiconductor's portfolio of superior, market driven, power MOSFETs," said Paul Leonard, vice president and general manager of ON Semiconductor's MOSFETs products division. "We plan to continue to introduce targeted MOSFET solutions that provide for the expanding needs of our consumer and industrial customer and strengthen the company's position as a leading industry provider of energy efficient power switching solutions."
The Devices
The portfolio offers a wide range of spec points enabling designers the flexibility to select the optimal RDS(on) and Gate Charge combination in DPAK, D2PAK and TO-220 packages.
NTB5411N - D2PAK, 60 V, 75 ID (A), 8.5 mW, 92 Qg, 336 mJ
NTP5411N - TO-220, 60 V,. 75 ID (A), 8.5 mW, 92 Qg, 336 mJ
NTB5412N - D2PAK, 60 V, 60 ID (A), 14 mW, 62 Qg, 211 mJ
NTP5412N - TO-220, 60 V, 60 ID (A), 14 mW, 62 Qg, 211 mJ
NTB5426N - D2PAK, 60 V, 120 ID (A), 5 mW, 170 Qg, 1000 mJ
NTP5426N - TO-220, 60 V. 120 ID (A), 5 mW, 170 Qg, 1000 mJ
NTD5413N - DPAK, 60 V, 45 ID (A), 21 mW, 33 Qg, 101 mJ
NTD5414N - DPAK, 60 V, 20 ID (A), 37.5 mW, 21.2 Qg, 57.8 mJ
All of these devices are RoHS compliant and are delivered in Pb-free packages. Samples and production quantities are currently available. Manufacturers suggested retail pricing ranges from $0.60 to $1.75 USD depending on part.
For additional information about the medium voltage power MOSFET devices offered by ON Semiconductor, visit http://www.onsemi.com or contact George Riehm at george.riehm@onsemi.com.
About ON Semiconductor
With its global logistics network and strong product portfolio, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of high performance, energy efficient, silicon solutions to customers in the power supply, automotive, communication, computer, consumer, medical, industrial, mobile phone, and military/aerospace markets. The company's broad portfolio includes power, analog, DSP, mixed-signal, advance logic, clock management, non-volatile memory and standard component devices. Global corporate headquarters are located in Phoenix, Arizona. The company operates a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com. ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its website in this news release, such information on the website is not to be incorporated herein.
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