Infineon Introduces 650V CoolMOS(TM) C6/E6 High-Voltage Power Transistors for Highest Efficiency and Easy Control in Switching Applications |
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Infineon Technologies AG Dep. CIC MC
St Martin Strasse 53
Germany
Press release date: June 24, 2010
Neubiberg, Germany - Infineon Technologies today launched the new 650V CoolMOS(TM) C6/E6 series of high-performance power MOSFETs, combining the advantages of modern superjunction (SJ) devices such as low on-resistance and reduced capacitive switching losses with easy control of switching behaviour as well as high body diode ruggedness. Based on the same technology platform, the C6 devices have been optimized for ease of use while the E6 devices have been designed to provide highest efficiency.
CoolMOS(TM) C6/E6 is the sixth generation of market leading high voltage SJ power MOSFETs from Infineon. The new 650V CoolMOS(TM) C6/E6 devices offer fast yet controlled switching performance and enable applications where efficiency and power density are key requirements. The 650V CoolMOS(TM) C6/E6 products are easy to design-in and are the best choice for various energy efficient switching applications such as notebook adapters, solar, and other switched mode power supply (SMPS) designs where extra breakdown voltage headroom is required.
"With the new 650V C6/E6 product range Infineon complements its earlier released CoolMOS(TM) 600V C6/E6 product family, allowing us to offer the benefits of our sixth generation of CoolMOS(TM) technology in those applications where 650V blocking capability is desirable," said Jan-Willem Reynaerts, Product Line Manager HVMOS Power Discretes at Infineon Technologies. "CoolMOS(TM) C6/E6 in that sense offers our customers an excellent migration path from our very successful 650V C3 series devices."
Compared to the CoolMOS(TM) C3 650V family, the new 650V CoolMOS(TM) C6/E6 devices offer up to 20 percent lower energy storage in the output capacitance (E oss), and additionally the improved body diode of the C6/E6 devices shows higher ruggedness against hard commutation and reduces the reverse recovery charge by 25 percent. The switching behavior of the C6/E6 series is capable of avoiding excessive voltage and current slopes thanks to its balanced design with tuned gate resistors.
Availability and pricing
Samples of the IPA65R280C6 / IPA65R280E6 (280mW in a TO220 FullPAK) and IPA65R380C6 / IPA65R380E6 (380mW in a TO220 FullPAK) are available now. Volume production of these first parts of the new C6/E6 650V series will be started in July 2010. The product range will be steadily extended and is scheduled to be completed by the end of 2010.
Pricing for the IPA65R280C6 / IPA65R280E6 is at 2.90 US Dollar each for an order volume of 10,000 pieces.
For further information, please see www.infineon.com/power and www.infineon.com/c6e6
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2009 fiscal year (ending September), the company reported sales of Euro 3.03 billion with approximately 25,650 employees worldwide. With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).
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