IR Introduces Revolutionary GaN-Based Power Device Technology Platform |
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International Rectifier Corp.
233 Kansas St.
El Segundo, CA, 90245
USA
Press release date: September 9, 2008
Proprietary GaN-on-silicon epitaxy and power device technology heralds new era for power conversion
EL SEGUNDO, Calif.--International Rectifier Corporation (NYSE:IRF) today announced the successful development of a revolutionary gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such as computing and communications, automotive and appliances.
The pioneering GaN-based power device technology platform is the result of five years of research and development by IR based on the company's proprietary GaN-on-silicon epitaxial technology.
IR's GaN-based power device technology platform enables revolutionary advancements in power conversion solutions. The portfolio of system solution products and related intellectual property (IP) extends far beyond leading-edge discrete power devices by effectively deploying the company's 60-year heritage in power conversion expertise in a wide variety of applications including AC-DC power conversion, DC-DC power conversion, motor drives, lighting, high density audio and automotive systems.
The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR's cost effective silicon manufacturing facilities, offers customers a world-class, commercially viable manufacturing platform for GaN-based power devices.
"This leading-edge GaN-based technology platform and IP portfolio extends IR's leadership in power semiconductor devices and heralds a new era for power conversion, in line with our core mission to help our customers save energy," said IR's President and Chief Executive Officer, Oleg Khaykin.
"We fully anticipate the potential impact of this new device technology platform on the power conversion market to be at least as large as the introduction of the power HEXFET® by IR some 30 years ago," he added.
Prototypes of several new GaN-based product platforms will be available to leading OEM customers at the Electronica tradeshow which takes place in Munich, November 11-14, 2008.
Khaykin continued: "We believe that early adopters will be those market segments and applications that will take full advantage of the revolutionary capability of transforming the value realization of the key features of power density, power conversion efficiency and cost".
International Rectifier will introduce the new GaN-based power device technology platform at a number of key industry events over the next two weeks including the Digital Power Forum '08 in San Francisco, September 15-17, 2008, the Embedded Power Conference 2008, September 17-18, 2008, San Jose and the International Workshop on Power Supply on A Chip taking place on September 22-24, 2008 in Cork, Ireland.
About International Rectifier International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog- and mixed-signal ICs, advanced circuit devices, integrated power systems, and components enable high-performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy-efficient appliances, lighting, automobiles, satellites, aircraft, and defense systems rely on IR's power-management benchmarks to power their next generation products. For more information, go to www.irf.com.
Trademark Notice IR® is a registered trademark of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.
For more information, contact Graham Robertson, grobert1@irf.com, 310-529-0321
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