Advanced Power Technology
Bend, OR 97702
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Microsemi Strengthens Radiation-Hardened Aerospace Products Portfolio
Delivers Industry's First 120V Input, 50W High-reliability DC-DC Converter Modules ALISO VIEJO, Calif., Nov. 1, 2011 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced that it strengthened its portfolio of radiation-hardened products with the industry's first family of 120 volt, 50...
Read More »Microsemi Strengthens Radiation-Hardened Aerospace Products Portfolio
Delivers Industry's First 120V Input, 50W High-reliability DC-DC Converter Modules ALISO VIEJO, Calif., Nov. 1, 2011 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced that it strengthened its portfolio of radiation-hardened products with the industry's first family of 120 volt, 50...
Read More »Customizable SoCs come in chip scale packages.
Catering to miniaturization needs of embedded systems, SmartFusion-® cSoC Series is available in CS288 288-ball chip scale package measuring 11 x 11 x 1.05 mm. Devices feature 100 MHz ARM® Cortex-M3(TM) 32-bit microcontroller sub-system with up to 500 K gates of FPGA. Available in commercial and industrial temperature grades as well as leaded and lead-free packages, SmartFusion® cSoCs...
Read More »Customizable SoCs come in chip scale packages.
Catering to miniaturization needs of embedded systems, SmartFusionÃ-® cSoC Series is available in CS288 288-ball chip scale package measuring 11 x 11 x 1.05 mm. Devices feature 100 MHz ARMî Cortex-M3(TM) 32-bit microcontroller sub-system with up to 500 K gates of FPGA. Available in commercial and industrial temperature grades as well as leaded and lead-free packages,...
Read More »Microsemi Unveils 65-nm Embedded Flash Platform
-- All Devices to Converge on Jointly Developed UMC 65-nm eFlash Technology -- New IP Friendly Architecture Offers More Functionality, Lower Power Consumption -- Company Offers Sneak Peek at Next-Generation FPGAs for Space IRVINE, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that its...
Read More »Microsemi Unveils 65-nm Embedded Flash Platform
-- All Devices to Converge on Jointly Developed UMC 65-nm eFlash Technology -- New IP Friendly Architecture Offers More Functionality, Lower Power Consumption -- Company Offers Sneak Peek at Next-Generation FPGAs for Space IRVINE, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that its...
Read More »RF Power MOSFET operates at dc voltages up to 165 V.
Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....
Read More »RF Power MOSFET operates at dc voltages up to 165 V.
Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....
Read More »Transistors target high L-band pulsed radar applications.
Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 -µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.
Read More »Transistors target high L-band pulsed radar applications.
Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 Ã-µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.
Read More »Microsemi Strengthens Radiation-Hardened Aerospace Products Portfolio
Delivers Industry's First 120V Input, 50W High-reliability DC-DC Converter Modules ALISO VIEJO, Calif., Nov. 1, 2011 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced that it strengthened its portfolio of radiation-hardened products with the industry's first family of 120 volt, 50...
Read More »Microsemi Strengthens Radiation-Hardened Aerospace Products Portfolio
Delivers Industry's First 120V Input, 50W High-reliability DC-DC Converter Modules ALISO VIEJO, Calif., Nov. 1, 2011 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced that it strengthened its portfolio of radiation-hardened products with the industry's first family of 120 volt, 50...
Read More »Customizable SoCs come in chip scale packages.
Catering to miniaturization needs of embedded systems, SmartFusion-® cSoC Series is available in CS288 288-ball chip scale package measuring 11 x 11 x 1.05 mm. Devices feature 100 MHz ARM® Cortex-M3(TM) 32-bit microcontroller sub-system with up to 500 K gates of FPGA. Available in commercial and industrial temperature grades as well as leaded and lead-free packages, SmartFusion® cSoCs...
Read More »Customizable SoCs come in chip scale packages.
Catering to miniaturization needs of embedded systems, SmartFusionÃ-® cSoC Series is available in CS288 288-ball chip scale package measuring 11 x 11 x 1.05 mm. Devices feature 100 MHz ARMî Cortex-M3(TM) 32-bit microcontroller sub-system with up to 500 K gates of FPGA. Available in commercial and industrial temperature grades as well as leaded and lead-free packages,...
Read More »Space Forum 2011 Kicks off in Los Angeles
IRVINE, Calif., Dec. 2, 2010 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that Space Forum 2011, formerly known as the Actel Space Forum, kicks off today in Los Angeles, California. With more than 100 registered attendees, this invitation-only event has drawn system designers from the country's...
Read More »Space Forum 2011 Kicks off in Los Angeles
IRVINE, Calif., Dec. 2, 2010 - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that Space Forum 2011, formerly known as the Actel Space Forum, kicks off today in Los Angeles, California. With more than 100 registered attendees, this invitation-only event has drawn system designers from the country's...
Read More »Microsemi Unveils 65-nm Embedded Flash Platform
-- All Devices to Converge on Jointly Developed UMC 65-nm eFlash Technology -- New IP Friendly Architecture Offers More Functionality, Lower Power Consumption -- Company Offers Sneak Peek at Next-Generation FPGAs for Space IRVINE, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that its...
Read More »Microsemi Unveils 65-nm Embedded Flash Platform
-- All Devices to Converge on Jointly Developed UMC 65-nm eFlash Technology -- New IP Friendly Architecture Offers More Functionality, Lower Power Consumption -- Company Offers Sneak Peek at Next-Generation FPGAs for Space IRVINE, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor technology aimed at building a secure, smart, connected world, announced that its...
Read More »RF Power MOSFET operates at dc voltages up to 165 V.
Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....
Read More »RF Power MOSFET operates at dc voltages up to 165 V.
Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....
Read More »